High Tc superconductor-gallate crystal structures
Gallagher, W.J.; Giess, E.A.; Gupta, A.; Laibowitz, R.B.; O'Sullivan, E.J.; Sandstrom, R.L.
IBM Corp., Armonk, NY (USA)1990
IBM Corp., Armonk, NY (USA)1990
AbstractAbstract
[en] This patent describes a superconductive combination. It comprises a crystalline gallate layer, including a rare earth element or another element selected from the group consisting of Y, La, Bi, and Sc, or combinations of a rare earth element and at least one of the another elements. A superconductive layer thereon, the superconductive layer having a transition temperature in excess of 77 degrees K. and being an oxide material having Cu-O planes whose Cu and O atoms align with Ga and O atoms in the gallate layer
Secondary Subject
Source
9 Oct 1990; 8 Jun 1988; vp; US PATENT DOCUMENT 7,962,086/A/; Patent and Trademark Office, Box 9, Washington, DC 20232 (USA); ?: 8 Jun 1988
Record Type
Patent
Country of publication
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