[en] This paper involves theoretical studies of current loss mechanisms in GaAs solar cells using PC-1D. In particular, the contribution to current-voltage characteristics of depletion layer recombination via traps at various locations in the forbidden gap has been modeled using PC-1D. The results of these studies are used to interpret experimental data for high efficiency GaAs solar cells. It is found that the double mechanism characteristic observed for high efficiency GaAs cells can usually be interpreted in terms of two mechanisms acting in parallel, one due to recombination via a midgap trap with n = 2, and another at higher voltages due to emitter/base recombination with n = 1, or a component characterized by n on the order of 1.1 to 1.5 due to recombination via a trap located between midgap and the conduction or valence band edge