[en] Method of backscattering of channeled ions is used to investigate evolution of Xe implanted ion distribution profiles, and also the accumulation and evolution of radiation defects produced in Ni single crystal (110) under irradiation with 630 KeV Xe⁺ and 300 KeV Kr⁺ ions to doses of 1x10¹⁵ to 5x10¹⁶ sm^-2 and 5x10¹⁶ to 1x10¹⁷ sm^-2, respectively, with a subsequent 100 deg C-step annealing in the temperature range from 20 to 1000 deg C