[en] Effect is studied of nitriding a silicon-dielectric structure in the process of MIS structure fabrication on the distribution of electrically active centers in the silicon subsurface region, generation lifetime of charge carriers, surface states density and their variation under ⁶⁰Co gamma-quanta irradiation. Influence is investigated of the silicon production technology on the electrophysical properties of dielectric-semiconductor interface and their variation under irradiation. It is established that nitrogen saturation of a silicon-dielectric interface does not deteriorate its electrophysical properties