[en] A systematic investigation of γ radiation effects in gate SiO₂ as a function of the fluorine ion implantation conditions was performed. It has been found that the generation of interface states and oxide trapped charges in fluorinated MOSFETs depends strongly on implantation conditions. The action of F in oxides is the conjunction of positive and negative effects. A model by forming Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress on Si/SiO₂ interface is used for experimental explanation