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Characterization of high-energy-heavy-ion-induced defects in GaAs by positron annihilation

Luo Qi; Fan Zhiguo; Wang Chunrui; Zheng Shennan; Gou Zhenghui; Li Anli; Zhu Shengyun
China institute of atomic energy annual report (1996)1997

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Primary Subject

MATERIALS SCIENCE (S36)

Source

China Inst. of Atomic Energy, Beijing (China); 180 p; ISBN 7-5022-1791-6;

Worldcat

; 1997; p. 126-128

Record Type

Book

Country of publication

Descriptors (DEI)

ANNEALING, ANNIHILATION, FLUORINE 19, GALLIUM ARSENIDES, HEAVY IONS, LIFETIME, MEV RANGE 10-100, PHYSICAL RADIATION EFFECTS, POSITRONS, TANDEM ELECTROSTATIC ACCELERATORS

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