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Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications

Hossin, M.A.
Newcastle upon Tyne Univ. (United Kingdom)1998

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AbstractAbstract

No abstract available

Primary Subject

INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY (S46)

Source

1998; [vp.]; Available from British Library Document Supply Centre- DSC:DXN020744; Thesis (Ph.D.)

Record Type

Miscellaneous

Literature Type

Thesis/Dissertation

Country of publication

Descriptors (DEI)

GALLIUM ARSENIDES, SCHOTTKY EFFECT, SWITCHES, SWITCHING CIRCUITS, TRANSISTORS

Descriptors (DEC)

ARSENIC COMPOUNDS, ARSENIDES, ELECTRICAL EQUIPMENT, ELECTRONIC CIRCUITS, EQUIPMENT, GALLIUM COMPOUNDS, PNICTIDES, SEMICONDUCTOR DEVICES

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