Low-temperature resistivity and susceptibility of the low-carrier density, one-dimensional S=((1)/(2)) antiferromagnet Yb4As3
Gegenwart, P.; Cichorek, T.; Custers, J.; Lang, M.; Aoki, H.; Ochiai, A.; Steglich, F., E-mail: gegenwart@cpfs.mpg.de2001
AbstractAbstract
[en] We report on low-T (T≥0.02 K) measurements of the electrical resistivity, ρ(T,B), and the magnetic AC-susceptibility, χac(T,B), on the low-carrier density, one-dimensional S=((1)/(2)) antiferromagnet Yb4As3 in magnetic fields B≤19 T. For 2 K≤T≤20 K we find ρ-ρ0=AT2 (ρ0: residual resistivity), with a large coefficient A∼0.75 μΩ cm/K2 followed by a minimum around 1 K and a 0.1% increase for T→0. In finite fields and below about 5 K, ρ(T,B) shows a history-dependent hysteretic behavior. The oscillatory behavior superimposed is attributed to the Shubnikov-de Haas effect arising from a low density of mobile As-p holes. For T≥0.4 K, χac(T) follows the prediction of the quantum sine-Gordon model. A cusp-like anomaly is found at 0.15 K
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S030488530000620X; Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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Journal of Magnetism and Magnetic Materials; ISSN 0304-8853; ; CODEN JMMMDC; v. 226-230(1-3); p. 630-632
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