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Rare earth implantation in GaN - an alternative route to develop integrated, all-nitride light-emitting devices

Lorenz, K.; Wahl, U.; Alves, E.; Wojtowicz, T.; Ruterana, P.; Dalmasso, S.; Nogales, E.; Martin, R.W.; O'Donnell, K.P.; Ruffenach, S.; Briot, O.2005

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AbstractAbstract

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Primary Subject

MATERIALS SCIENCE (S36)

Source

2005 annual conference of the German Physical Society (DPG) during the World year of physics: Physics since Albert Einstein; Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein; Berlin (Germany); 4-9 Mar 2005

Record Type

Journal Article

Literature Type

Conference

Journal

Verhandlungen der Deutschen Physikalischen Gesellschaft; ISSN 0420-0195;

Worldcat

; CODEN VDPEAZ; v. 40(2); p. 275

Country of publication

Descriptors (DEI)

ANNEALING, CATHODOLUMINESCENCE, CRYSTAL DEFECTS, CRYSTAL DOPING, CRYSTAL LATTICES, DAMAGE, EMISSION SPECTRA, ERBIUM IONS, EUROPIUM IONS, GALLIUM NITRIDES, ION IMPLANTATION, OPTICAL PROPERTIES, PHYSICAL RADIATION EFFECTS, TEMPERATURE DEPENDENCE, TEMPERATURE RANGE 0273-0400 K, TEMPERATURE RANGE 1000-4000 K, THULIUM IONS, TRANSMISSION ELECTRON MICROSCOPY

Descriptors (DEC)

CHARGED PARTICLES, CRYSTAL STRUCTURE, ELECTRON MICROSCOPY, EMISSION, GALLIUM COMPOUNDS, HEAT TREATMENTS, IONS, LUMINESCENCE, MICROSCOPY, NITRIDES, NITROGEN COMPOUNDS, PHOTON EMISSION, PHYSICAL PROPERTIES, PNICTIDES, RADIATION EFFECTS, SPECTRA, TEMPERATURE RANGE

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