Depth resolved positron annihilation study of N+ implanted InP
Venugopal Rao, G.; Amarendra, G.; Abhaya, S.; Nair, K.G.M.; Santhakumar, K.; Ravichandran, V.
Proceedings of the DAE solid state physics symposium. V. 462005
Proceedings of the DAE solid state physics symposium. V. 462005
AbstractAbstract
[en] The effect of low energy N+ ion irradiation on InP samples has been studied using depth resolved Doppler S-parameter measurements. InP samples have been irradiated with 85 keV N+ ions to a dose of 1 x 1013 to 1 x 1016 cm-2. Defect sensitive lineshape S-parameter and the complimentary W-parameter have been deduced at various depths. From the variation of S and from the slope of S-W correlation plots, it is concluded that monovacancies are present up to a dose of 1 x 1015 cm-2, while divacancies are present in 1 x 1016 cm-2 dose sample. (author)
Source
Sharma, S.M. (ed.) (Synchrotron Radiation Section, Bhabha Atomic Research Centre, Mumbai (India)); Sastry, P.U. (ed.) (Solid State Physics Div., Bhabha Atomic Research Centre, Mumbai (India)); Salunke, H.G. (ed.) (Technical Physics and Prototype Engineering Div., Bhabha Atomic Research Centre, Mumbai (India)); Board of Research in Nuclear Sciences, Dept. of Atomic Energy, Mumbai (India); 1053 p; ISBN 81-7764-652-4; ; 2005; p. 371-372; 46. DAE solid state physics symposium; Gwalior (India); 26-30 Dec 2003; 6 refs., 3 figs.
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