The effect and mechanism of the bipolar junction transistor in different temperature
AbstractAbstract
[en] The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)
Primary Subject
Source
2 figs., 15 refs.
Record Type
Journal Article
Journal
Nuclear Electronics and Detection Technology; ISSN 0258-0934; ; v. 27(1); p. 150-153
Country of publication
Descriptors (DEI)
Descriptors (DEC)
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue