On threshold energy anisotropy of primary radiation-induced defect forming in silicon
AbstractAbstract
No abstract available
Original Title
Ob anizotropii porogovoj ehnergii obrazovaniya pervichnykh radiatsionnykh defektov v kremnii
Source
Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.
Record Type
Journal Article
Journal
Fizika i Tekhnika Poluprovodnikov; v. 6(11); p. 2276-2278
Country of publication
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