Effect of additive charge carriers on ultrasound amplification in InSb
AbstractAbstract
No abstract available
Original Title
Vliyanie neosnovnykh nositelej zaryada na usilenie ul'trazvuka v InSb
Source
Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.
Record Type
Journal Article
Journal
Fizika i Tekhnika Poluprovodnikov; v. 6(12); p. 2403-2405
Country of publication
Descriptors (DEI)
Descriptors (DEC)
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue