[en] Study of photoelectric features of the irradiated samples of p-Ga S showed that the defect formation process leads to a strong change in concentrations of local levels, including r-centers of photosensitivity within gamma-irradiation. For the purpose of determination of the mechanism of recombination parameters of the recombination centers, the scheme of electronic transitions in Ga S crystals, we used a set of stationary and kinetic methods. Study of photoelectric features of the irradiated samples of p-Ga S showed that the defect formation process leads to a strong change in concentrations of local levels, including r-centers of photosensitivity within gamma-irradiation.
Source
Azerbaijan National Academy of Sciences, Baku (Azerbaijan); Executive Power of Ganja City, Ganja (Azerbaijan); 489 p; ISBN 978-9952-8304-1-5; 
; 2016; p. 7-8; International youth forum; Ganja (Azerbaijan); Oct 2016; Available from Azerbaijan National Academy of Sciences, Baku (AZ)
; 2016; p. 7-8; International youth forum; Ganja (Azerbaijan); Oct 2016; Available from Azerbaijan National Academy of Sciences, Baku (AZ)