[en] Total-irradiation-dose effect and room-temperature annealing behavior of a 10-bit bipolar analog-to-digital converter (ADC) irradiated by ⁶⁰Coγ-rays were investigated under different dose rates and bias conditions. The results show that the response of this kind of ADC circuit is very different under different conditions. The same electric parameters showed both enhanced low-dose-rate sensitivity effect (ELDRS) and time dependence effect (TDE). The further results show that 0V bias is the worst bias under low dose rate, while 5V bias is the worst under high dose rate. And the bias with the output terminal grounded via resistance has certain inhibition on the radiation damage. Finally, based on the space charge model and the fringing field effect, the differences of radiation damage and possible annealing mechanism was discussed. (authors)