[en] The Cadmium Zinc Sulphide (Cd_1-xZn_xS) is potential alloy for researchers to enhance the performance of (Cd, Zn) S/Cu(In, Ga)Se₂ solar cell in terms of efficiency up to 16.9%. The RF sputtering technique of preparing CdZnS films is being reported by us. A 300 nm thick film of CdZnS at 6x10^-3 torr pressure was prepared while maintaining a constant power supply of 80 w. We studied the effect of temperature on deposition process. For each deposition, a constant separation of 6.5 cm was maintained between source and target. The optical and structural properties of CdZnS films were investigated at various temperatures ranging from room temperature to 500 °C increasing at step size of 100°C. (author)