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Electrical properties and energy levels in electron-irradiated n-type InP

Leloup, J.; Djerassi, H.; Albany, H.J.
Lattice defects in semiconductors, 1974. Invited and contributed papers from the international conference on lattice defects in semiconductors held in Freiburg, 22-25 July 19741975

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AbstractAbstract

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Primary Subject

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY (A1300)

Source

Institute of Physics, London (UK); Institute of Physics Conference Series; no. 23; p. 367-372; ISBN 0854981136;

; 1975; Institute of Physics; London; International conference on lattice defects in semiconductors; Freiburg, F.R. Germany; 22 Jul 1974

Record Type

Book

Literature Type

Conference

Country of publication

United Kingdom

Descriptors (DEI)

ANNEALING, CRYSTAL DEFECTS, DOPED MATERIALS, ELECTRIC CONDUCTIVITY, ELECTRON BEAMS, HALL EFFECT, IMPURITIES, INDIUM COMPOUNDS, MEDIUM TEMPERATURE, MEV RANGE 01-10, N-TYPE CONDUCTORS, PHOSPHIDES, PHYSICAL RADIATION EFFECTS, TEMPERATURE DEPENDENCE

Descriptors (DEC)

BEAMS, CRYSTAL STRUCTURE, ELECTRICAL PROPERTIES, ENERGY RANGE, HEAT TREATMENTS, LEPTON BEAMS, MEV RANGE, PARTICLE BEAMS, PHOSPHORUS COMPOUNDS, PHYSICAL PROPERTIES, RADIATION EFFECTS, SEMICONDUCTOR MATERIALS

Reference NumberReference Number

6216217

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