Application of channeled He+ ion backscattering to the study of surfaces after sputter etching
AbstractAbstract
[en] The effect of RF sputter etching and ion milling on the (111) surface of silicon is studied by Rutherford backscattering analysis with 1.5-2MeV He+ beam. In all cases, three phenomena are observed: argon trapping, silicon amorphization and metallic impurities incorporation. The experimental results are discussed and compared with the previously published models
Original Title
Application de la retrodiffusion d'ions He+ canalises a l'etude des surfaces apres attaque ionique
Record Type
Journal Article
Journal
Vide. Couches Minces; v. 30(180); p. 210-213
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