This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95GHz and as high as 67.6% at 2.535GHz. The fabricated Doherty PA exhibits an average output power of 25.5dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95GHz. The fabricated chip size is smaller than 1mm². The input and output Doherty transformer areas are 0.5mm by 1.0mm and 0.7mm by 0.7mm, respectively.