AlixLabs is an Atomic Layer Etching (ALE) company. ALE’s integration with EUV lithography and patterning processes enhances the precision, selectivity, and overall quality of semiconductor manufacturing. By enabling atomic-scale control and reducing defects, ALE supports the production of advanced semiconductor devices with increasingly smaller feature sizes and more complex architectures. 🔔 For a fab manufacturing a 3 nm logic node wafer, lithography and etching contribute to 45% of the total CO2 footprint - we want to change that! 🔎 For detailed insights and specific examples, check out this recent review paper in JVSTA (Open Source): https://lnkd.in/eXba7YV3 #ALEtch #Lithography #semiconductors
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🚀 Pushing the Boundaries of Precision in EUV Lithography! To achieve finer critical dimensions and enhance adsorption yield, MOx-based photoresist (PR) was developed—a game-changing material first introduced by Inpria (a JSR company) in 2007 for high-NA EUV scanners. However, obtaining pristine TEM structures of MOx PR—before and after exposure—has been a major challenge for R&D engineers, as the material is easily damaged by electrons. Since 2018, MSS has partnered with Inpria to overcome this challenge. Leveraging our patented low-temperature ALD technology, we’ve successfully delivered non-damaged TEM analysis for MOx PR. In 2023, we became the first analytic company worldwide to analyze MOx PR samples for 0.5 NA experiments. Our cutting-edge results were proudly presented at the 2024 SPIE Advanced Lithography + Patterning conference, where we captured this exciting moment (see photo below). We’re proud to be at the forefront of enabling the next generation of semiconductor technology! #EUV #Lithography #Semiconductor #TEMAnalysis #Innovation #RDSupport
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It will be great to explore perovskite in detail with TEM analysis! Gene Liu Mike Chen! #TEM #perovskite
🚀 Pushing the Boundaries of Precision in EUV Lithography! To achieve finer critical dimensions and enhance adsorption yield, MOx-based photoresist (PR) was developed—a game-changing material first introduced by Inpria (a JSR company) in 2007 for high-NA EUV scanners. However, obtaining pristine TEM structures of MOx PR—before and after exposure—has been a major challenge for R&D engineers, as the material is easily damaged by electrons. Since 2018, MSS has partnered with Inpria to overcome this challenge. Leveraging our patented low-temperature ALD technology, we’ve successfully delivered non-damaged TEM analysis for MOx PR. In 2023, we became the first analytic company worldwide to analyze MOx PR samples for 0.5 NA experiments. Our cutting-edge results were proudly presented at the 2024 SPIE Advanced Lithography + Patterning conference, where we captured this exciting moment (see photo below). We’re proud to be at the forefront of enabling the next generation of semiconductor technology! #EUV #Lithography #Semiconductor #TEMAnalysis #Innovation #RDSupport
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During the #semiconductor wafer lithography, inspection, and dicing processes, the exact positioning of the wafer is critical. Today’s roadmap consists of features down to single digit nanometers. To create these features the positioning system must be capable of even smaller resolution. piezosystem jena #piezo systems which can move to sub-nm precision are perfect for semiconductor applications, where the #precision to nanometer scale is crucial in its steps! One example is our 3-axis TRITOR piezo stage and NV40/3 controller are used for semiconductor wafer-chunk positioning. To find more products for semiconductor manufacturing applications, click here: https://lnkd.in/evRG4RNR
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🔌 High #energyconsumption by #lithography tools is a major challenge to reduce the environmental impact of the #semiconductor industry. 🤝 Challenge accepted! Discover the substantial energy savings achieved thanks to an innovative and energy-efficient process integrated on 𝗦𝗖𝗥𝗘𝗘𝗡 𝗗𝗧-𝟯𝟬𝟬𝟬 track, by joining the presentation: 🗣 𝐄𝐧𝐡𝐚𝐧𝐜𝐢𝐧𝐠 𝐬𝐮𝐬𝐭𝐚𝐢𝐧𝐚𝐛𝐢𝐥𝐢𝐭𝐲 𝐢𝐧 𝐬𝐞𝐦𝐢𝐜𝐨𝐧𝐝𝐮𝐜𝐭𝐨𝐫 𝐦𝐚𝐧𝐮𝐟𝐚𝐜𝐭𝐮𝐫𝐢𝐧𝐠: 𝐄𝐧𝐞𝐫𝐠𝐲-𝐞𝐟𝐟𝐢𝐜𝐢𝐞𝐧𝐭 𝐨𝐩𝐭𝐢𝐜𝐚𝐥 𝐜𝐫𝐨𝐬𝐬𝐥𝐢𝐧𝐤𝐢𝐧𝐠 𝐟𝐨𝐫 𝐥𝐢𝐭𝐡𝐨𝐠𝐫𝐚𝐩𝐡𝐲 𝐩𝐫𝐨𝐜𝐞𝐬𝐬𝐞𝐬 by Elke Caron on 𝟯𝟬 𝗦𝗲𝗽𝘁𝗲𝗺𝗯𝗲𝗿 𝟮𝟬𝟮𝟰, 𝗮𝘁 𝟮:𝟬𝟱 𝗣𝗠 - 2:20 PM PDT at 𝗜𝗻𝘁𝗲𝗿𝗻𝗮𝘁𝗶𝗼𝗻𝗮𝗹 𝗖𝗼𝗻𝗳𝗲𝗿𝗲𝗻𝗰𝗲 𝗼𝗻 𝗘𝘅𝘁𝗿𝗲𝗺𝗲 𝗨𝗹𝘁𝗿𝗮𝘃𝗶𝗼𝗹𝗲𝘁 𝗟𝗶𝘁𝗵𝗼𝗴𝗿𝗮𝗽𝗵𝘆 𝟮𝟬𝟮𝟰, 𝟯𝟬 𝗦𝗲𝗽𝘁 𝘁𝗼 𝟬𝟯 𝗢𝗰𝘁. 𝗶𝗻 𝗠𝗼𝗻𝘁𝗲𝗿𝗲𝘆 𝗨𝗦𝗔 https://lnkd.in/gnx88Y_E #lithographytracksystems #energysavings #filmdensification
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Background electron dose is important to measure in EUV lithography systems. Besides stochastic defectivity, across-wafer CD uniformity is also impacted. It is possible to do this measurement, may already have been done at TSMC: https://lnkd.in/g8gK_kKm
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We are exhibiting at SEMICON Japan this week. Visit us at booth #7419 in East Hall 7 to see our latest samples and discuss how our solutions can enable the next step in semiconductor performance. Booth highlights include: 💎CNT membrane pellicles • Protect the photomask from contaminating particles during chip production. • Needed for next-gen EUV lithography machines operating at power levels exceeding 500W. • With high EUV light transmittance, exceptional strength, and thermal stability up to 1500°C in vacuum, CNT pellicles have the potential to surpass conventional composite pellicles in tolerating higher heat loads and mechanical stress of next-gen EUV lithography machines. • Supports productivity increase potential in the EUV lithography process by up to 7-15%. 💎Inspection membranes • Filter debris from EUV light source and optical path, preventing particle contamination on photomasks and enhancing quality control. • Feature high EUV transmittance for optimal light passage, enabling accurate defect detection. • Utilized at various inspection stages, including mask manufacturing and pre-and post-lithography processes. 💎Optical filters • Coated CNT membranes can be utilized as optical filters for EUV and X-ray applications, offering possibilities for dual functionality as optical and debris filters. • Selectively block unwanted particles, electrons, and photons (e.g., DUV, VIS, and IR radiation) while providing high EUV and X-Ray transmittance. • Available with customized coating layers to selectively filter specific wavelengths. • Ultra-thin free-standing CNT membrane can be supported by metallic or all-carbon mesh structures, enhancing mechanical durability. • Extremely versatile material, offering extensive customization enabling tailored solutions. • Compatible with high-vacuum and differential-pressure environments. We look forward to welcoming you at booth #7419 in East Hall 7 this week! #canatu #carbonnanotube #semiconductor #EUV #EUVpellicle #inspectionmembrane #opticalfilter #xrayfilter #SEMICONJapan Learn more: https://lnkd.in/dsEeqrGx
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TOKYO ELECTRON LIMITED has introduced Acrevia, a state-of-the-art gas cluster beam (GCB) system aimed at refining patterns created by EUV lithography. This advanced tool is set to reduce the necessity for EUV double patterning, thereby improving chipmaking yields and lowering production costs. Acrevia addresses critical challenges such as line edge roughness (LER), a common issue in lithography that affects the precision of pattern edges and overall chip performance. By optimizing pattern sidewalls through precise etching, Acrevia promises to significantly enhance within-wafer uniformity and mitigate LER, contributing to higher yield and better chip reliability. While not replacing High-NA EUV lithography, Acrevia marks a substantial leap forward in semiconductor manufacturing innovation. #EUV #lithography #semiconductor https://lnkd.in/ejGK29RW
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What’s better than Multibeam Corporation gracing the cover of Chip Scale Review, the authority on all things #semiconductor #advancedpackaging? Doing it TWICE…in a year! After 10+ years of development, last summer MultiBeam unveiled the industry’s first #productiongrade #electronbeam #lithography system, perfectly timed for the rise of #AI #semis and the unprecedented, exponentially rising demand for #compute, #power and #memory. New #IC architectures - lower power, faster and/or more conductive (via #compoundsemis) - are made possible with innovations in #manufacturing equipment. MultiBeam’s production-grade, high throughput systems use #electrons rather than lasers to pattern wafers, bringing a game-changing tool to the industry at a critical time. Partnerships with Synopsys Inc and SkyWater Technology are testaments to this technology coming to a #fab near you very soon! Congrats to Ken MacWilliams, Ted Prescop and team!
We're absolutely thrilled to announce another cover and article feature with Chip Scale Review! This technical article follows our July 2023 viewpoint feature which introduced Multicolumn E-Beam Lithography technology as a leading enabler of advanced packaging applications. In this piece, we dive further into how Multibeam capabilities are ushering in a new generation of advanced packaging that enables adaptive patterning of denser interconnects between chiplets – delivering the high speed, low power chip to chip communication required to leapfrog to next-generation performance of integrated chips. The industry is starting to refer to this as #AdvancedIntegration. Enjoy the read, and as we always say - Watch. This. Space! Whenever you’re ready to Accelerate Chip Innovation on your next brilliant idea, we’re ready to chat. 💬 #AdvancedPackaging #AdvancedIntegration #MulticolumnEBeamLithography #Multibeam https://lnkd.in/g9p75Kgk
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Join Joyce in the second video of the Intro to Lithography series as she breaks down the basics of the lithography process. From wafer creation, to spin coating and masking, uncover the essential steps in semiconductor manufacturing. Explore Brewer Science's contributions to advanced lithography and innovative packaging solutions at https://hubs.li/Q02D5bvD0
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tsmc: euv: hafnium: cluster: hydroxylated: 36nm: pitch:
The latest EUV work supported by TSMC showcases a resist based on a highly hydroxylated hafnium cluster which offers 36 nm pitch resolution at 30 mJ/cm2. As the cost of EUV light is very high because only 3–4% of the light is used for lithography, development of new EUV photoresists using low doses (<50 mJ cm−2) is given prior consideration. There was significant thickness loss and evidence of blurring. As there was no mask or hydrogen, there are no 3D-mask effects or EUV-induced plasmas, so secondary electrons are the main suspect for the blur and resist loss. https://lnkd.in/gdMV8rWF
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