Beneq’s P400A batch ALD tool played a key role in Sylvester Sahayaraj et al.'s research, enhancing ZnO thin films with Ge doping. The study highlights improved conductivity, optical transmittance, and a blue shift in the band gap, advancing their potential in optoelectronic applications. Check out: Tuning the Optical and Electrical Properties of ALD-Grown ZnO Films by Germanium Doping: https://hubs.li/Q02SVQd70 #ALDep #Optoelectronics #ThinFilms
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Prof. Ma Jing and his team have revolutionized epitaxial Hf0.5Zr0.5O2 #ferroelectric films by stabilizing the R3 phase with precise doping and stress control, improving material properties and optimizing device performance. #innovativetsinghua More: bit.ly/49ctNxR
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This article on the VO2 system reflects a combined work explaining the implications of the strain and the Cr doping on the insulator-to-metal transition (IMT) characteristics regarding its understanding and technological applications. Both the Cr doping and substrate-induced strain have been found to be key to understanding the IMT. We have devised a study to disentangle the relative role of Cr doping and strain in the IMT of the VO2 thin film, which was made possible by working on the purely strained and the Cr-doped strained VO2 thin films.
Strain effects on insulator-to-metal transition and electronic structure in ${\mathrm{VO}}_{2}$
journals.aps.org
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Happy to share that our paper is accepted by Advanced Materials. We show a new way outside the bulk phase diagram to enhance superconductivity in hybrid thin film, Bi2Te3/Fe(Te,Se). Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures https://lnkd.in/gfdUwCMj #MolecularBeamEpitaxy #TopologicalSuperconductivity #Chalcogenide #FeBasedSuperconductor
Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
onlinelibrary.wiley.com
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Plasma plays a vital role in a wide range of applications, from plasma processing and surface modification to ion implantation and thin film deposition. Understanding the behaviour of ions within a plasma is essential for optimizing these processes. One crucial parameter that characterizes ion behaviour is the ion energy distribution function (IEDF). To read more about IEDF click here - https://lnkd.in/d7NSba2m To learn more about Impedans Semion RFEA that measures IEDF click here - https://lnkd.in/d6kbjCat #plasmadiagnostics #semiconductors #semiconductorindustry #semiconductormanufacturing #nanotechnology #semiconductortechnology #plasmaphysics
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FEATURED PRODUCT: The Nanochrome IV PARMS produces dielectric thin film layers by reactive magnetron sputtering with final reaction and film densification at the substrate surface using a high current, low energy ion source. Reactive operation results in faster deposition times. Low pressure sputtering achieves higher deposition rates. Films are made reactively to produce highly dense, pure oxides and nitrides suitable for the UV, VIS NIR, SWIR and MWIR ranges. Intlvac #photonics
Intlvac PARMS for Sputtered IR Films
photonics.com
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The Covalent Connection Between 2D Materials Improves Device Optoelectronic Response Researchers chemically link 2D materials using a molecular ‘velcro’, resulting in a device with improved optoelectronic properties. The device, made of palladium nanosheets covalently bonded with MoS2, shows an enhanced optoelectronic response in the infrared. The next generation of 2D-2D heterostructures goes beyond van der Waals thanks to the strong covalent bonds between 2D materials. Read more: https://lnkd.in/etf9vNHp #CovalentConnection #Optoelectronic #palladium #nanosheets #StatNano #NBIC #nanotechnology
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Orientational Switching of Perpendicular Magnetic Anisotropy and Near-Infrared Plasmonic States in SrRuO3 Thin Films: Implications for Spintronic Device https://lnkd.in/gGvubYfb #serb #iisc #dst-desy #ugc-csir #brns
Orientational Switching of Perpendicular Magnetic Anisotropy and Near-Infrared Plasmonic States in SrRuO3 Thin Films: Implications for Spintronic Devices
pubs.acs.org
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Professor Richard Hogg, CTO of III-V Epi, has released his next Expert Article, ‘A comparison between Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapour Phase Epitaxy (MOCVD) technologies’. This can be read on the III-V Epi website. The article compares the MBE and MOCVD epitaxial growth technologies used in III-V semiconductor synthesis and explores the applications they best suit and why. Material systems and wavelengths, applications, process speeds, base and regrowth epitaxy requirements, structure requirements, etching, accuracy and measurement techniques are all covered. Read the full article here… https://lnkd.in/e4uMusMG #photonics #mocvd #mbe #semiconductor
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NanoMOKE®3: Characterization of magnetic thin films and nanostructures
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Learn more about lithium detection and nanoscale analysis using the Gather-X Windowless EDS detector on the #JEOL IT800 series. https://lnkd.in/eUKRHhFC
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