We are excited to announce that CGD's 650 V ICeGaN® P2 Series has won Best Power Semiconductor of the Year by EE Awards Asia! 🏆 CGD's 650 V ICeGaN® P2 Series ICs are uniquely designed for high-power applications, like data centres, motor drives and EV chargers, with ease of use, gate reliability and efficiency in mind. Powered by our innovative ICeGaN® technology, they can seamlessly interface with Si MOSFET, SiC and IGBT gate drivers. Besides, the P2 Series offer thermally-enhanced packages featuring bottom-side cooling and dual-side cooling that improve heat dissipation and increase efficiency. Learn more about the products here 👉 https://lnkd.in/gcfqyipt A huge thank you to EE Times Asia for this honor and to our incredible team for their continuous commitment to innovation. Together, we’re shaping the future of clean, sustainable tech. #GreenTech #galliumnitride #Sustainability #Innovation #Efficiency #PowerSemiconductors #CleanTech
Congratulations to all at Cambridge GaN Devices. A great accolade.
Congrats Cambridge GaN Devices Ltd
Congrats to Cambridge GaN Devices Ltd!
Congratulations!
Congrats!
what an achievement from the team - well done!