Cambridge GaN Devices Ltd’s Post

We are excited to announce that CGD's 650 V ICeGaN® P2 Series has won Best Power Semiconductor of the Year by EE Awards Asia! 🏆 CGD's 650 V ICeGaN® P2 Series ICs are uniquely designed for high-power applications, like data centres, motor drives and EV chargers, with ease of use, gate reliability and efficiency in mind. Powered by our innovative ICeGaN® technology, they can seamlessly interface with Si MOSFET, SiC and IGBT gate drivers. Besides, the P2 Series offer thermally-enhanced packages featuring bottom-side cooling and dual-side cooling that improve heat dissipation and increase efficiency. Learn more about the products here 👉 https://lnkd.in/gcfqyipt A huge thank you to EE Times Asia for this honor and to our incredible team for their continuous commitment to innovation. Together, we’re shaping the future of clean, sustainable tech. #GreenTech #galliumnitride #Sustainability #Innovation #Efficiency #PowerSemiconductors #CleanTech

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what an achievement from the team - well done!

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Roger Lewis

Accomplished Chair and iNED across a wide range of sectors.

2w

Congratulations to all at Cambridge GaN Devices. A great accolade.

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Jubed Miah

International Semiconductor Executive Summits | MEMS World Summit

2w
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Beth Trier

CEO, Trier and Company, Award-Winning Integrated Communications Agency for Technology Companies, Board Advisor, Startup Mentor. #integratedcommunications #B2Bmarketing #GaN #Cybersecurity #Semiconductor

2w

Congratulations!

Neil Thaker

Strategic Account Manager Defense/Aerospace/Automotive/Medical/Industrial/Energy

2w

Congrats!

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