Division of Electromagnetics and Nanoelectronics (EMN)’s Post

To extend the output DC power range of energy harvester from µW to mW, the 29.5 GHz rectifier using vertical nanowire Tunnel Field-Effect Transistor (VNW-TFET) is presented in this paper. Advantaged by the low threshold voltage, very steep characteristics, and its ability to operate below 60mV/decade, VNW-TFET is a promising device in rectifier design for low power applications. By analyzing the relation of the number of nanowires in VNW-TFET and its DC characteristic, the rectification efficiency of the proposed design is approximately 20.1% at the input power of 132 µW. Moreover, its peak efficiency is 49.2% at 20 mW, and the input power range for rectification efficiency higher than 40% is between 1.2 dBm and 15.7 dBm when the number of nanowires in VNW-TFET is 20. This study was conducted by Ngoc-Duc Au, Marcus Sandberg, Gautham Rangasamy, Lars Fhager and Lars-Erik Wernersson from The Division of Electromagnetics and Nanoelectronics (EMN). https://lnkd.in/gscrrBTJ

A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs

A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs

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