Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik’s Post

In the paper, a bidirectional monolithic switch based on enhancement mode GaN FET is presented. The GaN device belongs to Gate Injection Transistors and features dual gate with two power terminals. The GaN FET technology have reduced RDS(ON) with fast transients, it is much attractive for the use in bidirectional switch applications.

Fiber-Optic Gyroscope ASE Light Source 1530nm / 1560nm from Lumispot Type: Other Sources Spectral Output Range (nm): 6.5 - 10 Power Output Range (mW): 10 - 10 Optical Power Stability: 0.2%@25°C Spectral Shape: Gaussian Type Relative Humidity: 5%-90% Power Supply: DC 5V Size: 98*98*18.8mm Fiber Optic Type: SMF28e or 80-80/165 In high-precision fiber gyroscopes, the 1550nm doped fiber light source excels. Its symmetrical spectrum reduces sensitivity to temperature and pump power variations, while lower self-coherence minimizes phase errors, making it ideal for precise measurements.

An active gate drive (AGD) circuit SiC MOSFETs was proposed in this paper. Experimental results showed that the pro AGD circuit can effectively reduce the overshoot and oscillations of the SiC MOSFET drain posed AGD circuit can effectively reduce the overshoot and oscillations of the SiC current and drain-source voltage.

Transistor mosfet, mosfet circuits, High voltage mosfet, Types of MOSFET

Mosfet transistor, power mosfet, high speed transistor circuits, mosfet module

The Darlington Transistor named after its inventor, Sidney Darlington is a special arrangement of two standard NPN or PNP bipolar junction transistors (BJT) connected together. The Emitter of one transistor is connected to the Base of the other to produce a more sensitive transistor with a much larger current gain being useful in applications where current amplification or switching is required. Darlington Transistor pairs can be made from two individually connected bipolar transistors or a one single device commercially made in a single package with the standard: Base, Emitter and Collector connecting leads and are available in a wide variety of case styles and voltage (and current) ratings in both NPN and PNP versions. As we saw in our Transistor as a Switch tutorial, as well as being used as an amplifier, the bipolar junction transistor, (BJT) can be made to operate as an ON-OFF switch as shown. Bipolar Transistor as a Switch Reza rashoud

Today we are simulating a pi-shifted grating! Grating parameters: 20 mm length, uniform refractive index profile, index modulation 1.5E-4, grating pitch 535.96 nm with a pi phase jump in the center of the grating. Fiber parameters: step index germanosilicate fiber, 0.12 NA, 8.2 micron core. Effective index at 1550 nm is 1.446002 https://lnkd.in/gW_X-ay #FBG #simulation #fiberoptics

New paper out today on measuring kilowatt laser power using photon pressure force measured by one of our self-calibrating tabletop balances. Practical realization of the watt from Planck's constant using radiation pressure https://lnkd.in/eA2a_3Yg Thanks to the NIST Sources and Detectors group for collaborating to interface their High Amplification Laser pressure Optic (HALO) with our tabletop electrostatic force balance (EFB). This demonstrates one of the advantages of the redefinition of the international system of units. We can use electrical metrology based on Planck's constant to provide embedded mass and force standards that don't require test masses for calibration. #NationalQuantumInitiative #NISTonaChip

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The GaN on Silicon’s E-mode and D-mode device are difference from EPI-structure, and then the p-GaN doping of Mg so lower, activity concentration, lead to the device performances not good at high electric field. Particularly, the dynamic Rds,on is important index (according to 100Kz of PWM and Voltage stress in hard switch), which increase stress of high voltage within the Rds,on increasing. We can design EPI/Process/CP test/package/ circuit to total solution and GaN HEMT reliability stable as well.