Frederick Chen’s Post

The latest EUV work supported by TSMC showcases a resist based on a highly hydroxylated hafnium cluster which offers 36 nm pitch resolution at 30 mJ/cm2. As the cost of EUV light is very high because only 3–4% of the light is used for lithography, development of new EUV photoresists using low doses (<50 mJ cm−2) is given prior consideration. There was significant thickness loss and evidence of blurring. As there was no mask or hydrogen, there are no 3D-mask effects or EUV-induced plasmas, so secondary electrons are the main suspect for the blur and resist loss. https://lnkd.in/gdMV8rWF