Igor Marinkovic’s Post

Jingxian Li, Yiyang Li and collaborators used electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors. They revealed that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. This result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors. #Matter https://lnkd.in/eUMjnvZq

𝗠𝗮𝗴𝗻𝗲𝘀𝗶𝘂𝗺 𝗢𝗽𝘁𝗿𝗼𝗱𝗲𝘀 𝗳𝗼𝗿 𝗥𝗲𝗮𝗹-𝗧𝗶𝗺𝗲 𝗢𝗽𝘁𝗶𝗰𝗮𝗹 𝗠𝗼𝗻𝗶𝘁𝗼𝗿𝗶𝗻𝗴 𝗼𝗳 𝗪𝗮𝘁𝗲𝗿 𝗧𝗿𝗮𝗻𝘀𝗽𝗼𝗿𝘁 𝗶𝗻 𝗨𝗹𝘁𝗿𝗮𝘁𝗵𝗶𝗻 𝗘𝗻𝗰𝗮𝗽𝘀𝘂𝗹𝗮𝘁𝗶𝗼𝗻𝘀 𝗳𝗼𝗿 𝗕𝗶𝗼𝗲𝗹𝗲𝗰𝘁𝗿𝗼𝗻𝗶𝗰𝘀. Recent studies investigated the hydrolysis of Magnesium (Mg) thin films, highlighting their potential use in biodegradable devices. Quantitatively monitoring the degradation rate and morphological changes of Mg through optical methods and light-delivery devices offers an innovative, contactless technique, independent of electrical wiring. This method is particularly useful for challenging sensing applications. This study introduces a set of strategies based on Mg optrodes where hydrolysis drives the real-time monitoring of biofluid penetration through thin-film encapsulations for bioelectronics. This enables a straightforward assessment of their long-term reliability, through a quantitative correlation between the water transmission rate (WTR) of the encapsulation and the Mg optical modifications. The optical response of the corroding Mg films deposited on glass substrates and multimode optical fiber tips within the visible spectrum is characterized. Finally, it is demonstrated that nanopatterning of Mg films as plasmonic nanoantennas significantly enhances the sensitivity of the quantitative approach in the mid-infrared spectrum through localized plasmon effects. This method achieves a WTR detection of 6.9 × 10−3 gm−2 day−1 in phosphate buffer solution (25 °C), with a theoretical lower detection limit of ≈10−5 gm−2 day−1. These findings pave the way for the development of a new class of nano-optical water-permeation sensors. https://lnkd.in/gii9dCXy

𝐃𝐞𝐟𝐞𝐜𝐭-𝐅𝐫𝐞𝐞, 𝐅𝐞𝐰-𝐀𝐭𝐨𝐦𝐢𝐜-𝐋𝐚𝐲𝐞𝐫 𝐓𝐡𝐢𝐧 𝐙𝐧𝐎 𝐍𝐚𝐧𝐨𝐬𝐡𝐞𝐞𝐭𝐬 𝐰𝐢𝐭𝐡 𝐒𝐮𝐩𝐞𝐫𝐢𝐨𝐫 𝐄𝐱𝐜𝐢𝐭𝐨𝐧𝐢𝐜 𝐏𝐫𝐨𝐩𝐞𝐫𝐭𝐢𝐞𝐬 𝐟𝐨𝐫 𝐎𝐩𝐭𝐨𝐞𝐥𝐞𝐜𝐭𝐫𝐨𝐧𝐢𝐜 𝐃𝐞𝐯𝐢𝐜𝐞𝐬. Two-dimensional (2D) wide bandgap materials are gaining significant interest for next-generation optoelectronic devices. However, fabricating electronic-grade 2D nanosheets from non-van der Waals (n-vdW) oxide semiconductors poses a great challenge due to their stronger interlayer coupling compared with vdW crystals. This strong coupling typically introduces defects during exfoliation, impairing the optoelectronic properties. Herein, the authors report the liquid-phase exfoliation of few-atomic-layer thin, defect-free, free-standing ZnO nanosheets. These micron-sized, ultrathin ZnO structures exhibit three different orientations aligned along both the polar c-plane as well as the nonpolar a- and m-planes. The superior crystalline quality of the ZnO nanosheets is validated through comprehensive characterization techniques. This result is supported by density functional theory (DFT) calculations, which reveal that the formation of oxygen vacancies is energetically less favorable in 2D ZnO and that the c-plane loses its polarity upon exfoliation. Unlike bulk ZnO, which is typically dominated by defect-induced emission, the exfoliated nanosheets exhibit a strong, ambient-stable excitonic UV emission. The authors further demonstrate the utility of solution processing of ZnO nanosheets through their hybrid integration with organic components to produce stable light-emitting diodes (LEDs) for display applications. https://lnkd.in/g6juHsvT

🔦Why choose Silicon Nitride (SiN) waveguide chips for your next photonic integrated circuit (PIC) application? 1️⃣ Low Propagation Loss SiN waveguides are known for their low propagation losses, crucial for high-performance PICs where signal attenuation needs to be minimized to maintain signal integrity over long distances. ℹ️Our TriPleX® waveguides have ultra low propagation losses, 0.1 dB/cm down to 0.1 dB/m.. 2️⃣ Wide Transparency Window SiN waveguides exhibit low optical loss across a broad wavelength range, from near-ultraviolet to infrared (400 nm to 2350 nm). This wide transparency window supports high optical power handling & makes them versatile for applications in telecommunications, bio-sensing, quantum and many more. 3️⃣ Integration Flexibility SiN can be integrated with various other materials, which allows for the design of complex and multifunctional photonic circuits. ℹ️SiN TriPleX® waveguides excel in integrating with active components for light emission, amplification, or detection, enhancing their versatility across fields such as life sciences, sensing, metrology, and telecom/datacom. ➡️Discover more about SiN TriPleX® waveguide technology : https://lnkd.in/ePYTmWxH

SemeaTech has officially announced the newest SM-series electrochemical gas sensor – 4SM TEOS-50 designed for semiconductor process control and leakage monitoring. These advanced sensors provide exceptionally high resolution, achieving a 2x standard deviation resolution of less than 0.1ppm with exceptional linearity (R²=0.9997)， making them particularly well-suited for high precision detection in the related semiconductor industrial site (TEOS serves as a precursor in CVD processes to create silicon dioxide films on wafers, acts as a photolithography agent for pattern transfer during microelectronics processing and other uses). Furthermore, TEOS is widely utilized in the semiconductor industry due to its unique chemical structure and excellent physicochemical properties and is one of the important and indispensable raw materials in the semiconductor manufacturing process. The 4SM TEOS-50 sensors offer excellent stability and consistent repeatability and linearity, ensuring reliable performance in demanding applications sites while enhancing worker safety in related industries. Here's the following link to the new 4SM TEOS-50 sensors’ product page: https://lnkd.in/gxg77e2v Please contact us at info_us@semeatech.com for more details. #gasdetection #gasdetector #gasdetectors #gassafety #gassafe #semiconductor #semiconductorindustry

The advent of hydrogel semiconductor materials is expected to be used in biointegrated circuits

𝐇𝐨𝐰 𝐭𝐨 𝐦𝐚𝐤𝐞 𝐮𝐥𝐭𝐫𝐚 𝐭𝐡𝐢𝐧 𝐩𝐮𝐫𝐞 𝐬𝐢𝐥𝐢𝐜𝐨𝐧 𝐚𝐧𝐨𝐝𝐞𝐬? We use magic to produce next generation anodes, or do we? It’s not magic. It’s PECVD, a thin film technology. Let us explain. For the production of our unique pure silicon anodes, we apply a technique commonly used in the photovoltaic and semiconductor industry, Plasma-Enhanced Chemical Vapor Deposition (PECVD). PECVD is an effective method to grow a thin film onto a surface at high speeds. PECVD relies on introducing gas particles into a plasma, where they are broken apart. The resulting ‘chemical vapor’ is highly reactive (bright colors in the image below), and will bond with any surface introduced into the system. If the surface moves through the plasma system at a controlled speed, a thin film with a desired uniform thickness can be deposited. In LeydenJar’s case, PECVD enables a nano-engineered thin layer of pure silicon. Silicon-containing gas molecules are introduced into the plasma and a thin film existing of porous and flexible silicon is formed on copper foil. The production technique results in a high silicon anode area loading on both sides, enabling the production of the world’s most energy-dense lithium-ion batteries. Want to learn more about how our pure silicon anodes are made and how these are used in practice? Check our technology page below: https://lnkd.in/eqMAbeWC

ULVAC Technologies, Inc. and Silicon Austria Labs (SAL) collaborate to develop plasma etching processes for high-volume TFLN manufacturing. #Electronics #Lithiumniobate #News #NLD5700 #SiliconAustriaLabsGmbH #Software #TFLNPlasmaEtching #ULVACInc

My first exposure to silicon nitride was as a Process Engineer starting out at Marconi, at their in Lincoln wafer fab, in 1986. It's intriguing to see how it continues to be a preferred material of choice, especially now for silicon photonics waveguide applications. To produce it in its most purest form requires thermally-driven chemical vapour deposition, or CVD, in a furnace, at temperatures above 700C. Silane, ammonia and nitrogen gases are typically mixed and cracked at low pressure to deposit the film. This approach produces films with very low concentrations of gaseous byproducts incorporated into them. These temperatures do however limit its application to front end wafer fabrication. Plasma enhanced, or PECVD processes, were invented to replace these thermal processes so that silicon nitrides and oxides can be deposited in the backend at 400C, or just below. Aluminium melts at around 550C, so interconnects could be passivated with this silicon nitride at that time, exploiting its barrier and encapsulation properties. Furthermore, employing plasma enhancement means that the film can be optimised using the RF bombardment component. In other words, tuning the RF power in the process allows fine adjustment of the film stress and refractive index. These properties, interestingly, tend to be work in opposing directions. Refractive index, and other optical properties, are clearly parameters that benefit from tuning for photonics applications. Moving to lower process temperatures with PECVD however has its penalties. Gas byproducts remain in film when using ammonia-based chemistry. It is quite usual to see in excess of 20% hydrogen content, and this reduces its ability to provide the same level of passivation properties as thermal films. Hence there normally needs to be additional packaging encapsulation for most chip applications. Potentially too, this hydrogen could become mobile, and shift the film characteristics whilst in service. Hydrogen content can be reduced significantly by using silane nitrogen chemistries, but deposition rates can be painfully slow.

Agnitron’s Latest Cover Story “Superior Showerheads” in Compound Semiconductor Magazine Agnitron Technology proudly announces the publication of its latest cover story titled “Superior Showerheads” in Volume 30, Issue 1 of Compound Semiconductor Magazine for the year 2024. This feature highlights Agnitron’s groundbreaking advancements in MOCVD (Metal-Organic Chemical Vapor Deposition) technology. The particular focus is on the patent pending Gen III Close Injection Showerhead (CIS). The article delves into the transformative impact of wide and ultra-wide bandgap materials, such as AlN, Ga2O3, and ScAlN on power electronics. Agnitron’s Gen III CIS showerhead is showcased for its ability to unlock the potential of these materials, offering superior growth rates, unmatched uniformity, and exceptional surface quality exceeding production standards on the Agilis R&D platform. Key highlights of the article include: Introduction to Agnitron’s expanding portfolio of OEM semiconductor growth tools, including MOCVD, CVD, and HVPE technologies. Details on the innovative Gen III CIS showerhead, which addresses persistent hardware challenges in epitaxial semiconductor material growth. Results from extensive testing, demonstrating enhanced performance in Ga2O3 and AlN growth, showcasing remarkable thickness uniformity and surface smoothness. Insights into the significance of Ga2O3 and ScAlN materials for next-generation power devices and microwave transistors, along with Agnitron’s contributions in advancing their growth processes. Agnitron’s dedication to pushing the boundaries of materials growth is evident through its innovative tools and technologies, paving the way for advancements in power electronics. By focusing on continuous innovation, Agnitron aims to support its customers in bringing high-quality products to market faster and more reliably.