IMPULSE TECHNOLOGY’s Post

#NANODCAL_SIMULATOR Click here for full Publication paper -: https://lnkd.in/g8wZnc-N The photogalvanic effect (PGE) enables the generation of photocurrent at zero bias and without the need of the p-n junction, and also offer a high polarization sensitivity in a broadband range, showing potential applications in the low-power 2D optoelectronics, however the PGE photocurrent is generally small. Here we studied the PGE in the 2D WTe2  monolayer using the quantum transport simulations, and proposed the mechanism to effectively enhance the PGE photocurrent by substitution-doping and vacancy-defects. The PGE photocurrent can be generated in the 2D WTe2  monolayer under the vertical illumination of linearly polarized light. The photocurrent can be enhanced evidently by creating the vacancy or Ga-substitution doping, and moreover a higher polarization sensitivity can be obtained. This performance is attributed to the reduced symmetry due to the doping, which increases the device asymmetry and therefore enhance the photocurrent. Our results propose the mechanism to effectively enhance the PGE by substitution doping and also show the promising applications of the 2D WTe2 monolayer in optoelectronics including the photodetections. #solarcell #oled #dft #graphene #2dmaterial #nanomaterial #nanodevice #semicunductordevice

【Examining NiPS3: Properties, Application, and Challenges】 Full article: https://lnkd.in/gs6JWHCB (Authored by Jake Huang, from Polytechnic School, USA.) Because of its tunable bandgap, excitonic behavior, antiferromagnetism, and anisotropic conductivity, two-dimensional van der Waals (vdW) material, nickel-phosphorus trisulfide (#NiPS3), is a very promising candidate for optoelectronics, #spintronics, and energy conversion applications. This work explores some of the fundamental aspects defining the excitonic behavior of NiPS3, such as bandgap characteristics, antiferromagnetism, and semiconductor nature derived from its layered structure. #2D_Materials #Bandgap_Engineering #Semiconductors #Materials_Science 

More application developments for Raman in the high end semiconductor space

This new confocal Raman microscopy app note on compound semi conductors has some interesting results that were obtained on the aplha300SE CRM platform that can fully address a 300mm wafer chuck. 💎Check out the Raman & very detailed photoluminescence correlation on SiC defects. (page 6&7). 👓 Keep skimming and check out that stress/ strain map of a GaN dislocation source in Figure 7B: the color table is striking ➡ almost looks 3D on the monitor.

Quantum dots (QD) are semiconductor nanoparticles with optoelectronic capabilities that vary upon their size and composition. Failure analysis (FA) of the QD growth process requires characterization at the nanoscale level. The dual-beam FIB microscope is perfect for this task, since it allows the acquisition of high-resolution SEM images and the milling of TEM samples (lamellae) with the aid of Ga+ ions. The lamella preparation with a FIB microscope is like precisely cutting a thin slice (less than 100 nm thick) from a specific location, using a beam of charged particles.   The images below show a lamella containing a cross-section of 30-nm-sized QD. Having trouble with FA? Optimize your R&D processes with our FIB microscope services at the Technion RBNI FIB Lab: https://lnkd.in/dbR78M5r. #FIB #SEM #RBNI #FA #failureanalysis #Thermofisher

This work introduces a novel approach to modeling the photothermal behavior of semiconducting materials by developing a Moore-Gibson-Thompson (MGT) fractional photothermal model that incorporates a generalized Caputo fractional derivative with a tempering parameter. This advanced model is specifically designed to analyze elastic plasmonic wave systems in photothermal environments, offering deeper insights into the interactions between thermal, mechanical, and electromagnetic fields in semiconductors. Please visit: https://lnkd.in/g7qcFm8k #ESCI #Scopus #mathematics

Power Electronics and Thick Epitaxial GaN We reported over the last year that dislocations in 20 micron GaN become entangled and stabilize their configuration. Our x ray topograph images show this and indicates that breakdown voltage cannot be further increases beyond 2 kV with thicker epitaxial growth.

The future of optoelectronics is directed towards small-area light sources, foremost being microLEDs. However, their use has been inhibited so far primarily due to fabrication and integration challenges, which impair efficiency and yield. Recently, bottom-up nanostructures grown using selective area epitaxy have garnered attention as a solution to the aforementioned issues. Prof. Lan Fu et. al. have used this technique to demonstrate uniform p-i-n core-shell InGaAs/InP nanowire array light emitting diodes. Full-length paper available at https://lnkd.in/g5MrSBzM Multi-wavelength nanowire micro-LEDs for future high speed optical communication

📔– New Application Note: Correlative Raman Imaging of Compound Semiconductors –🔬 This brand-new study shows correlative Raman imaging, PL and topographic analyses of compound semiconductors using the WITec alpha300 Semiconductor Edition Raman microscope. 🔹 SiC wafer doping, stress, strain, crystallinity, topography and warpage measured 🔹 4H-SiC wafer defects characterized using correlative Raman-PL 🔹 Tensile and compressive stress of a Frank-Read source in GaN analyzed alpha300 Semiconductor Edition page: https://okt.to/jUX6uJ Semiconductors application page: https://okt.to/75Qx2U #Semiconductors #CompoundSemiconductors #Raman #Microscopy #Spectroscopy #SiC #GaN

Our latest article, "Potential of Gallium Oxide as a Radiation-Hard Technology," is now published in the Journal of Computational Electronics, part of the special issue on "Numerical Simulation of Optoelectronic Devices." Using TCAD simulations, we demonstrate that Ga₂O₃ Schottky diodes can endure proton fluences (~10¹⁵ cm⁻² at 5 MeV) with no degradation, significantly outperforming 4H-SiC and Si counterparts. This highlights Ga₂O₃’s exceptional promise for radiation-hard, high-power electronics in harsh environments like space. Check out the article here: https://lnkd.in/dmGrWk5x #GalliumOxide #RadiationHardTechnology #Optoelectronics #ComputationalElectronics