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The association of #2Dmaterials and #ferroelectrics offers a promising approach to tune the optoelectronic properties of atomically thin #TransitionMetalDichalcogenides (TMDs). * In the article “Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2” by Mariola O Ramirez, Jaime Fernandez-Tejedor, Daniel Gallego, Javier Fernández-Martinez, Pablo Molina, David Hernández Pinilla, Julio Gomez Herrero, Pablo Ares and Luisa E. Bausá, the combined effect of #ferroelectricity and light on the #optoelectronicproperties of monolayer (1L)-MoS2 deposited on periodically poled #lithiumniobate crystals is explored. * Using scanning micro-photoluminescence, the effect of excitation intensity, scanning direction, and #domainwalls on the 1L-MoS2 #photoluminescence properties is analyzed, offering insights into charge modulation of #MoS2. * The findings unveil a photoinduced charging process dependent on the #ferroelectricdomainorientation, in which light induces charge generation and transfer at the monolayer-substrate interface. * This highlights the substantial role of light excitation in ferroelectrically-driven electrostatic doping in MoS2. Additionally, the work provides insights into the effect of the strong, nanometrically confined electric fields on #LiNbO3 domain wall surfaces, demonstrating precise control over charge carriers in MoS2, and enabling the creation of deterministic p-n homojunctions with exceptional precision. The results suggest prospects for novel optoelectronic and photonic application involving monolayer TMDs by combining light-matter interaction processes and the surface selectivity provided by ferroelectric domain structures. To corroborate the optical results, Mariola O Ramirez et al. measured current-voltage (I-V) curves by using two #AFMcantilevers with platinum-coated #AFMtips in contact with the 1L-MoS2 i) on a single domain region, and ii) on both sides of a ferroelectric domain wall where the p-n junction is formed. The results are shown in Figure 3c. (cited in here). The #electricalcharacterization was carried out by means of a home-built two-terminal probe station with 2 sets of xyz piezomotors that allow precise positioning of the electrical probes. NANOSENSORS™ AdvancedTEC™ ATEC-EFM #tipviewAFMprobes, conductive AFM tips that protrude from the very end of the AFM cantilever, ensuring real AFM tip visibility from above for a soft and accurate mechanical and electrical contact. * https://lnkd.in/e5AAg-EG To characterize the electrical properties of the system, the ATEC-EFM probes were brought into direct contact with the MoS2 flakes , as verified using a force sensor with a sensitivity of ≈1 mN located underneath the sample. This ensures a good electrical contact between the #AFMprobes and the MoS2. * Full citation and direct link to the full article in our blog: https://lnkd.in/eu3MesBH

  • Figure 3 from Mariola O Ramirez et al. 2024 “Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2”:
Nanometric control over charge carriers in MoS2. a) Integrated PL intensity of 1L-MoS2 on the vicinity of a ferroelectric domain wall in LiNbO3 for an excitation intensity close to 103 W cm−2. b) PL spectra of 1L-MoS2 in different regions: I and IV correspond to the Pdown and Pup domain surfaces, respectively; II and III correspond to the vicinities of the domain wall surfaces. The spectral positions of the exciton (A) and trion (A−) bands are indicated. c) Dark intensity-voltage (I–V) curves measured contacting the 1L-MoS2 by using two Pt-coated tips on a same single domain surface (blue) and both sides of a single domain wall (red). Schematics of the experimental configuration are shown in the right panels.
Conductive NANOSENSORS™ AdvancedTEC™ ATEC-EFM tip-view AFM probes were used.
  • Scanning Electron Microscopy (SEM) image of NANOSENSORS™ AdvancedTEC™ tip-view AFM probe - side view of AFM tip and AFM cantilever
  • Figure 3 c from Mariola O Ramirez et al. 2024 “Light-Induced Ferroelectric Modulation of p-n Homojunctions in Monolayer MoS2”: 
Nanometric control over charge carriers in MoS2. 
c) Dark intensity-voltage (I–V) curves measured contacting the 1L-MoS2 by using two Pt-coated tips on a same single domain surface (blue) and both sides of a single domain wall (red). Schematics of the experimental configuration are shown in the right panels.
Conductive NANOSENSORS™ AdvancedTEC™ ATEC-EFM tip-view AFM probes with a nominal stiffness of 2.8 N m−1 were used for the electrical characterization ensuring real tip visibility from above for a soft and accurate mechanical and electrical contact. To characterize the electrical properties of the system, the ATEC-EFM AFM probes were brought into direct contact with the MoS2 flakes

Have a look at the NANOSENSORS blog or the cited article to see the full figure and description.

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