#Semiconductor Industry Sees Major Leap with TSMC’s 1.6 Nanometer Technology #TSMC has made a monumental stride in semiconductor #technology by introducing a 1.6 nanometer process, a significant leap from the 3-Micron Technology initiated in 1987. This latest innovation underscores TSMC’s enduring leadership in the semiconductor sector, where they currently produce about 90% of the world’s chips, powering advancements in technology and AI. Key innovations include a shift from FinFET to Gate-All-Around (GAA) transistors, also known as Nanosheet transistors. This new architecture allows for up to 35% reduction in power consumption compared to earlier technologies. An equally transformative development is the introduction of backside power delivery. This enhancement separates power interconnects from signaling pathways, a change that promises to simplify chip layouts, increase density, and improve overall performance. Here's a breakdown of why this is significant: Miniaturization: Moving from 3 microns to 1.6 nanometers represents an incredible shrinking of transistor size.This allows for more transistors to be packed onto a single chip, leading to more powerful and efficient processors. Performance and Efficiency Gains: TSMC estimates that chips made using their 1.6nm process will offer an 8-10% performance improvement or a 15-20% reduction in power consumption compared to previous generations.This translates to faster devices that use less battery or require less cooling. Industry Leadership: TSMC's dominance in chip manufacturing is further solidified with this innovation. Their ability to consistently deliver cutting-edge processes makes them a critical partner for tech companies around the world. Overall, TSMC's 1.6nm process is a major leap forward that will have a ripple effect across the entire technology industry,paving the way for even more powerful and efficient devices in the future. Here are some additional points to consider: The 1.6nm process is still a few years away from mass production, with commercial availability expected around late 2026. This technology represents a significant engineering challenge, and there are ongoing discussions about the limitations of miniaturization as we approach the atomic level. Despite these challenges, TSMC's achievement is a testament to the continuous innovation in the semiconductor industry. #innovation #semiconductor #chipdesign #courses #semicondynamics Object Automation CDACINDIA Dr. Satya Gupta Farhang Yazdani Sameer Shende Andrew Kahng Peter Hofstee Jayakumar S Dr sujatha jamuna anand S D Sudarsan, Ph.D.
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This week in Semiconductor Aug 9th Q2 2024: #SIA - global semiconductor sales reached a staggering $149.9 billion, marking an 18.3% increase compared to Q2 2023 and a 6.5% rise from Q1 2024 Industry Reports Highlighting Key Trends The SIA, in collaboration with Boston Consulting Group (#BCG), released a pivotal report titled “Attracting Chips Investment: Industry Recommendations for Policymakers.” In parallel, #SEMI’s latest report indicated a 7% increase in worldwide silicon wafer shipments in Q2 2024. This surge is primarily driven by robust demand in sectors like #AI, #5G #MarketProjections and Technological Advancements The RF #GaN (Gallium Nitride) market is set for remarkable growth, projected to reach $2 billion by 2029, reflecting a 10% compound annual growth rate (CAGR) according to Yole Group. Additionally, TECHCET and the Critical Materials Council forecasts that revenues from semiconductor metal and oxide precursors will hit $1.7 billion in 2024, marking a 15% increase over 2023 figures The global smartphone market has also shown resilience, with an 8% year-over-year rise, reaching 289.1 million unit shipments in Q2 2024, as reported by Counterpoint Research OLED-on-silicon (#OLEDoS) is projected to dominate the high-end VR/MR market, with TrendForce predicting its share will reach 23% by 2030. Meanwhile, #LCD technology is expected to maintain a 63% share in near-eye displays, highlighting the ongoing competition and evolution in display technologies #Pioneering Technologies and #Strategic Developments The semiconductor industry is on the cusp of a significant shift with the upcoming adoption of high-NA #EUV #lithography by the top three foundries as early as 2025 #LamResearch has introduced a new version of its #cryogenic etch technology, which is designed to enhance the manufacturing of #3DNAND for #AI applications #Imec, in collaboration with #ASML, has made significant strides in high-NA EUV lithography, presenting patterned structures that confirm the readiness of this technology for future logic and memory applications #Strategic Alliances and Industry Moves The U.S. Department of Commerce (DoC) and #SKhynix have taken a significant step forward by signing a preliminary memorandum to provide up to $450 million in #CHIPSAct funding. #Infineon has also made headlines by opening the first phase of its new 200mm fab in #Malaysia, which is expected to become the world’s largest. The facility will initially focus on silicon carbide (#SiC) power semiconductors, utilizing gallium nitride (#GaN) epitaxy #Strategic Investments and #IPO Announcements SEMI Europe- Recommended that the #EUCommission place minimal restrictions emphasizing the need for #open •markets and international collaboration #Cerebras Systems, a pioneer in wafer-scale chip technology, has filed for an #IPO with the U.S. SEC #Groq, an #AI hardware startup, raised $640 million in Series D funding Thanks to SemiEngineering for insights Ref: See comments
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Silicon has been the incumbent semiconductor material for decades, but it has a new challenger in the form of gallium nitride (GaN) and its rise is paving the way for some impressive advancements in semiconductor technology. One of the pioneering startups leading this charge is @Finwave Semiconductor Inc. a company that was born out of the engineering brilliance of co-founders Tomas Palacios and Bin Lu The pair first teamed-up at MIT, and one of their early breakthroughs was developing a brand new type of GaN transistor based on a FinFET architecture. They called their innovation 3DGaN. This architecture held a lot of potential for applications like 5G, and with 5G beginning to surge at the time, the pair decided to spin their technology out of MIT and found FinWave. They then spent several years focused on developing the technology to ready it for manufacturing in fabs using standard CMOS processes. Despite GaN’s advantages, convincing customers the cost of switching is worth is it remains one of the greatest, common hurdles to its adoption. Other GaN pioneers like Navitas Semiconductor and EPC - Efficient Power Conversion have overcome this challenge using a similar approach, and I think Finwave’s early emphasis on design for manufacturability was a wise decision. After some additional years of investment in R&D and engineering, Finwave got their 3DGaN FinFET technology to a stage where it offered substantial improvements over other power amplifiers in terms of linearity and reducing leakage current, current collapse and knee voltage. These are all very attractive characteristic for telco operators that have large 5G radio arrays. In February, Finwave also unveiled their first family of high-power RF switch products that feature fast switching and settling time, broadband operations up to 12GHz and high-power handling (up to 40W) and its the combination of broadband operation, fast switching and high-power handling that sets their offerings apart from the rest of the market. As they continue advancing their technology, they see huge opportunities in other markets that need high frequency solutions such as AI, cloud computing and automotive and reportedly, they’ll be showcasing new solutions at the upcoming International Microwave Symposium in Washington DC in June. CEO, Dr. Pierre-Yves Lesaicherre, said, “Finwave is on the cusp of bringing the true potential of GaN to some of today’s most important enabling markets. Our technology has already demonstrated its ability to deliver extremely high performance in higher frequency applications… additionally, we are making strong progress in moving our patented GaN-on-Si technology from the MIT lab to high-volume production.” Personally, I’m eager to see how they’ll continue to push the boundaries of what’s possible with GaN but I’m curious what the community thinks… do you think GaN someday REPLACE silicon as the go-to material for semiconductors? #semiconductorindustry #powermanagement
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Silicon Photonics Is On Fire! It's Taking This Wafer Fab By Storm 🔥 🌪️ Tower expects revenue from its silicon photonics business to more than double this year, to about $100 million. 🤑 💰 Marco Racanelli, president of Tower Semiconductor, said the company has caught the wave of chip demand that supports the AI boom. Analysts say the Israeli chip foundry is ahead of its competitors in producing silicon photonics and silicon germanium, which speed up data transmission and save power. The new technology gives Tower a competitive advantage over TSMC and Intel, which also have silicon photonics businesses. 💱 🤝 "We see a huge demand for silicon photonics and silicon germanium in the AI market," Racanelli said. "We use silicon germanium processes to produce amplifiers, transimpedance amplifiers and drivers, as well as all the optical components in silicon photonics." 🎮 🚄 The company is relying on the laser technology of its partner, chip designer/IP provider OpenLight, to expand its photonics portfolio. Tower and OpenLight are creating an ecosystem for producing silicon photonic chips. "For the next generation of products, we think there is an opportunity to integrate lasers using the OpenLight process," Racanelli said...... 🎬 💿 📀Learn More:https://lnkd.in/gnq98tDp #semiconductors #integratedcircuits #electroniccomponents #storage #ai #ems #oemfactory #icchips #icchip #aerospace #industrial #medicalcare #automotive #ai #sensors #energy #military #hardware #5g #consumerelectronics #Silicon #wafer
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🎯🎯🎯Intel to establish advanced chip research center in Japan with EUV technology ☑️Intel is set to collaborate with Japan’s national research institutions to launch a state-of-the-art semiconductor R&D center aimed at enhancing the country's chip manufacturing capabilities in equipment and materials, sectors where Japan excels. The facility, which will house cutting-edge extreme ultraviolet (EUV) lithography equipment, is expected to be completed in three to five years. This center will be the first in Japan to allow industry players to jointly access EUV equipment for prototyping and testing, fostering collaboration across the sector. ☑️The National Institute of Advanced Industrial Science and Technology (AIST), under Japan's Ministry of Economy, Trade and Industry, will oversee the facility’s operations, while Intel will contribute its expertise in EUV-based chip manufacturing. The project is anticipated to involve an investment of several hundred million dollars. Given that EUV machines are essential for producing semiconductors at 5nm and smaller scales—critical for increasing chip performance through higher transistor density—their cost, which exceeds 40 billion yen ($273 million) per unit, presents a significant barrier for individual suppliers of equipment and materials. ☑️Currently, many Japanese companies depend on EUV equipment at international research hubs like Belgium's Imec for their development needs. While Japan’s Rapidus initiative aims to bring EUV technology for mass semiconductor production by the end of the year, domestic research institutions still lack access to such advanced equipment. 🆂🅴🆁🆅🅸🅲🅴🆂 ✔Sourcing hard-to-find, obsolete, LTB for electronic components ✔Full product traceability ✔Accept Return Material Authorization ✔Shorter lead times 📲Whatsapp/Wechat:+0086-15019214647 #ATMEL #E2V #Telit #Broadcom #M2M #Micron #Vishay #Automotiveengineering #Electricvehicles #Digitalization #smartmobility #iot #NVIDIA #V100 #H100 #IGBT #Newenergy #Newpower #ODM #OEM #OEMs #Ulis #Honeywell #GE #GERenewableEnergy #Windpower #Windenergy #Turbine #electric #Electrical #electrical #ElectricityMeters #electronic #electronicaFair #ElectronicComponents #electronics #ems #EMSmanufacturer #Shortage #shortagecomponents #SMT #SMTPCB #software #control #controller #solarpower #solar #energy #System #agent #buyer #chip #chipagent #chipalternative #chipdistributor #Chips #chipstock #chipsubstitution #components #distributor #IC #Infineon #Intel #Interver #Maxim #MCU #sourcing #medicaldevice #medicalmachinery #memory #Microcontroller #NPI #onestopsolution #pcb #PCBA #PCBAmanufacturing #PCBAssembly #pcbchina #pcbmanufacturing #plc #procurement #projectmanager #purchase #purchasing #quality #Solution #sourceability #Sourcing #supplychain #stm #stock #stockparts #substitution #supervisor #TexasInstruments #TI #ST #NXP #XILINX #STMicroelectronics #ON #MICROCHIP #microchips #Qualcomm #Renesas #ONSEMI #CTO
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Wafer: 1.MT L72A / L73A / L83A-M / L84A-M /B16A-M /B47R-M / B47R-R 2. KIOXIA 8T24 / 9T24 3. Sam GCGF /AFG V4 /AFG V5 1.2V & 1.8V /AFG V6 1.2V & 1.8V /AHG V5 1.2V & 1.8V /SLC F4GF 4Gb 4. HY 8D2C 128Gb MLC /8A1B V6 512Gb 5. YMTC JGS CS0 / CS2 wafer Technology Symposium with Innovations Powering Al with Silicon Leadership SANTA CLARA, CA, Apr. 24, 2024-TSMC (TWSE: 2330, NYSE: TSM) today unveiled its newest semiconductor process, advanced packaging, and #3D IC technologies for powering the next generation of Al innovations with silicon leadership at the Company's 2024 North America Technology Symposium. TSMC debuted the TSMC #A16T™ technology, featuring leading nanosheet transistors with innovative backside power rail solution for production in 2026, bringing greatly improved logic density and performance. TSMC also introduced its System-on-Wafer (TSMC-SoWTM) technology, an innovative solution to bring revolutionary performance to the wafer level in addressing the future Al requirements for hyperscaler datacenters サンタクララ、CA、2024年4月24日-TSMC(TWSE: 2330、NYSE: TSM)は、本日同社の2024年北米テクノロジーシンポジウムで、次世代のAIイノベーションを支えるための最新の半導体プロセス、先進パッケージング、および3D IC技術を発表しました。 TSMCは、2026年の量産開始を予定している、業界をリードするナノシートトランジスタを備えたTSMC A16T™技術を初公開しました。これにより、論理密度と性能が大幅に向上します。 TSMCはまた、システムオンウエハ(TSMC-SoW™)技術を紹介しました。これは、ハイパースケーラーデータセンター向けの将来のAI要件に対応し、ウエハレベルで革命的な性能を提供する革新的なソリューションです。 This year marks the 30th anniversary of TSMC's North America Technology Symposium, and more than 2,000 attended the event, growing from less than 100 attendees 30 years ago. The North America Technology Symposium in Santa Clara, California kicks off TSMC Technology Symposiums around the world in the coming months. The symposium also features an "Innovation Zone," designed to highlight the technology achievements of our emerging start-up customers. "We are entering an #Al-empowered world, where artificial intelligence not only runs in data centers, but PCs, mobile devices, automobiles, and even the Internet of Things," said TSMC CEO Dr. C.C. Wei. "At TSMC, we are offering our customers the most comprehensive set of technologies to realize their visions for Al, from the world's most advanced silicon, to the broadest portfolio of advanced packaging and 3D IC platforms, to specialty technologies that integrate the digital world with the real world." New technologies introduced at the symposium include: TSMC A16TM Technology: With TSMC's industry-leading N3E technology now in production, and N2 on track for production in the second half of 2025, TSMC debuted A16, the next technology on its roadmap. A16 will combine #china #europe #buy #globalbusiness #headhunter #usa #automotive #automotiveindustry #leadership #motivation #kindness #bestadvice #personaldevelopment #linkedin #hiring #careers #help #employment #happiness #jobs #health #global #world #jobchange #process #plasma #Knlowledgestudy #buyer #globalbusiness #Technology #recycle
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📈The latest report from a market research agency stated that global silicon wafer shipments in 2024 will be approximately 12.174 billion square inches (MSI), down approximately 2% from the same period last year. But as wafer demand continues to recover from the down cycle, shipments are expected to see strong growth of about 10% in 2025... 📈Recently, the Semiconductor Industry Association (SEMI) announced in its latest annual silicon wafer shipment forecast report that after experiencing a 14.3% decline last year, the global silicon wafer market shipments will significantly narrow this year's decline, falling only 2.4% 📈According to SEMI's forecast, global silicon wafer shipments will decrease by 2.4% to 12.174 billion square inches (MSI) in 2024. As silicon wafer demand continues to recover from the down cycle, shipments will rebound strongly by nearly 10% in 2025 to 13.328 billion square inches (MSI). 📈Against the backdrop of growing demand for artificial intelligence (AI) and advanced processes, global semiconductor fab capacity utilization will gradually increase. In addition, advanced packaging and high-bandwidth memory (HBM) New applications in production that require additional wafers will also drive growing demand for silicon wafers. 📈Silicon wafers are the basic building material for most semiconductors, which are an essential component of all electronic devices. This highly engineered thin disk, which can be up to 300mm in diameter, can be used as the substrate material for making most semiconductor devices or chips. SEMI predicts that global silicon wafer shipments are expected to reach a record high of 15.413 billion square inches (MSI) in 2027, surpassing the high of 14.565 billion square inches (MSI) set in 2022 #integratedcircuit #EMS #SMT #AI #5G #Semiconductor #Infineon #NXP #MICROCHIP #ADI #TexasInstruments #Xilinx #Renesas #ONSEMI #STMicroelectronics #Intel #Samsung #Qualcomm #Broadcom #Nvdia #AMD #Apple #Electroniccomponents #Electronics #Qorvo #Micron #MediaTek #GlobalFoundries #UMC #Kioxia #SMIC #NVIDIA #SKhynix #Altera #BOSCH #Tesla #Mayhwa #Allegro #Semtech #DIODES #Littelfuse #Nexperia #KEMET #Rohm #BYD #ASML
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TSMC Unveils 1.6nm Process Technology With Backside Power Delivery: An anonymous reader quotes a report from Tom's Hardware: TSMC announced its leading-edge 1.6nm-class process technology today, a new A16 manufacturing process that will be the company's first Angstrom-class production node and promises to outperform its predecessor, N2P, by a significant margin. The technology's most important innovation will be its backside power delivery network (BSPDN). Just like TSMC's 2nm-class nodes (N2, N2P, and N2X), the company's 1.6nm-class fabrication process will rely on gate-all-around (GAA) nanosheet transistors, but unlike the current and next-generation nodes, this one uses backside power delivery dubbed Super Power Rail. Transistor and BSPDN innovations enable tangible performance and efficiency improvements compared to TSMC's N2P: the new node promises an up to 10% higher clock rate at the same voltage and a 15%-20% lower power consumption at the same frequency and complexity. In addition, the new technology could enable 7%-10% higher transistor density, depending on the actual design. The most important innovation of TSMC's A16 process, which was unveiled at the company's North American Technology Symposium 2024, is the introduction of the Super Power Rail (SPR), a sophisticated backside power delivery network (BSPDN). This technology is tailored specifically for AI and HPC processors that tend to have both complex signal wiring and dense power delivery networks. Backside power delivery will be implemented into many upcoming process technologies as it allows for an increase in transistor density and improved power delivery, which affects performance. Meanwhile, there are several ways to implement a BSPDN. TSMC's Super Power Rail plugs the backside power delivery network to each transistor's source and drain using a special contact that also reduces resistance to get the maximum performance and power efficiency possible. From a production perspective, this is one of the most complex BSPDN implementations and is more complex than Intel's Power Via. Volume production of A16 is slated for the second half of 2026. "Therefore, actual A16-made products will likely debut in 2027," notes the report. "This timeline positions A16 to potentially compete with Intel's 14A node, which will be Intel's most advanced node at the time." Read more of this story at Slashdot.
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https://lnkd.in/g86S_iKW A state-funded semiconductor lab in China said it has achieved a "milestone" in the development of silicon photonics, which could help the country overcome cur... a lot of improvements in semiconductors have happened over the decades in "more than Moore" technology - i.e. non-logic stuff that doesn't entirely rely on scaling #flash memory (SSD), #dram, #imagesensors etc made by the likes of Samsung Semiconductor, Micron Technology and Sony are prime examples. The silicon photonics technology is one such. Integrated lasers and photodiodes don't exactly need the latest lithography, and while it is advantageous to have logic right next to it (because what use is transporting data without the ability to process it) the #chiplet revolution is making things such that and older gen 45nm chip with photonics can sit in the same package as a 3nm processor and give more or less the same functionality as a photonics block Integrated directly into the said processor chip China will keep making progress as a result in many areas of semiconductors, in spite of US sanctions which primarily effect lithography in EUV equipment.
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TSMC Unveils 1.6nm Process Technology With Backside Power Delivery: An anonymous reader quotes a report from Tom's Hardware: TSMC announced its leading-edge 1.6nm-class process technology today, a new A16 manufacturing process that will be the company's first Angstrom-class production node and promises to outperform its predecessor, N2P, by a significant margin. The technology's most important innovation will be its backside power delivery network (BSPDN). Just like TSMC's 2nm-class nodes (N2, N2P, and N2X), the company's 1.6nm-class fabrication process will rely on gate-all-around (GAA) nanosheet transistors, but unlike the current and next-generation nodes, this one uses backside power delivery dubbed Super Power Rail. Transistor and BSPDN innovations enable tangible performance and efficiency improvements compared to TSMC's N2P: the new node promises an up to 10% higher clock rate at the same voltage and a 15%-20% lower power consumption at the same frequency and complexity. In addition, the new technology could enable 7%-10% higher transistor density, depending on the actual design. The most important innovation of TSMC's A16 process, which was unveiled at the company's North American Technology Symposium 2024, is the introduction of the Super Power Rail (SPR), a sophisticated backside power delivery network (BSPDN). This technology is tailored specifically for AI and HPC processors that tend to have both complex signal wiring and dense power delivery networks. Backside power delivery will be implemented into many upcoming process technologies as it allows for an increase in transistor density and improved power delivery, which affects performance. Meanwhile, there are several ways to implement a BSPDN. TSMC's Super Power Rail plugs the backside power delivery network to each transistor's source and drain using a special contact that also reduces resistance to get the maximum performance and power efficiency possible. From a production perspective, this is one of the most complex BSPDN implementations and is more complex than Intel's Power Via. Volume production of A16 is slated for the second half of 2026. "Therefore, actual A16-made products will likely debut in 2027," notes the report. "This timeline positions A16 to potentially compete with Intel's 14A node, which will be Intel's most advanced node at the time." Read more of this story at Slashdot.
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TSMC Unveils 1.6nm Process Technology With Backside Power Delivery: An anonymous reader quotes a report from Tom's Hardware: TSMC announced its leading-edge 1.6nm-class process technology today, a new A16 manufacturing process that will be the company's first Angstrom-class production node and promises to outperform its predecessor, N2P, by a significant margin. The technology's most important innovation will be its backside power delivery network (BSPDN). Just like TSMC's 2nm-class nodes (N2, N2P, and N2X), the company's 1.6nm-class fabrication process will rely on gate-all-around (GAA) nanosheet transistors, but unlike the current and next-generation nodes, this one uses backside power delivery dubbed Super Power Rail. Transistor and BSPDN innovations enable tangible performance and efficiency improvements compared to TSMC's N2P: the new node promises an up to 10% higher clock rate at the same voltage and a 15%-20% lower power consumption at the same frequency and complexity. In addition, the new technology could enable 7%-10% higher transistor density, depending on the actual design. The most important innovation of TSMC's A16 process, which was unveiled at the company's North American Technology Symposium 2024, is the introduction of the Super Power Rail (SPR), a sophisticated backside power delivery network (BSPDN). This technology is tailored specifically for AI and HPC processors that tend to have both complex signal wiring and dense power delivery networks. Backside power delivery will be implemented into many upcoming process technologies as it allows for an increase in transistor density and improved power delivery, which affects performance. Meanwhile, there are several ways to implement a BSPDN. TSMC's Super Power Rail plugs the backside power delivery network to each transistor's source and drain using a special contact that also reduces resistance to get the maximum performance and power efficiency possible. From a production perspective, this is one of the most complex BSPDN implementations and is more complex than Intel's Power Via. Volume production of A16 is slated for the second half of 2026. "Therefore, actual A16-made products will likely debut in 2027," notes the report. "This timeline positions A16 to potentially compete with Intel's 14A node, which will be Intel's most advanced node at the time." Read more of this story at Slashdot.
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