RIBER’s Post

In semiconductor device fabrication, where intricate patterns are etched onto semiconductor wafers, ion angle and aspect ratio are crucial. Controlling ion angle helps maintain uniform sidewall angles and enhances feature fidelity across the wafer. High aspect ratios can lead to variations in sidewall profiles, resulting in defects and reduced device yield.  Impedans addresses these challenges with capillary plates—specialized structures designed for plasma etching processes to control and limit ion angles. Used in conjunction with the Impedans Semion RFEA, these plates enable accurate ion angle and energy measurements, supporting the control and optimization of aspect ratios during plasma etching. To read more click here - https://lnkd.in/d2jGzFx8 #ionaspectratio #ionangle #etchingprocess #etching #plasmaprocess #plasmadiagnostics #plasmameasurement #semiconductorindustry

Charged particle microscopes are frequently tasked with imaging and manipulating smaller specimens than ever before, particularly to support the development of 10-nanometer nodes and finer semiconductor devices. In order to achieve this resolution, precise control of precursor chemicals and charge compensator fluids is required. Due to harsh application environments, these high-technology instruments require robust components capable of operating within a vacuum and at elevated temperatures. The Lee Company's IEP Series solenoid valve precisely controls critical fluids in adverse environments and is uniquely suited for multiple charged particle microscope applications. https://thelee.co/3TsZlI3

New paper is out! In the current issue of npj 2d materials and applications https://buff.ly/4e48Tm6 we describe how the electronic structure of an ultrathin semiconductor can be tuned by strain and screening.

Continuing the thread from last week, I mentioned cleaning a gold surface starting with an etch process. As it goes with all etches and cleans, we have to worry about the impact of the final film if we put a flex circuit into a wet etch or clean.  We can clean off gold film residues in a variety of wet etchants, with minimal impact on the gold film. Also, gold films can hold up with some plasma etches and cleans. This opens up a variety of cleaning methods, both "dry" and wet. Looking at gold from the opposite intention, how do we etch a gold film? This knowledge is relatively common in semiconductors and other thin film processing, like MEMS. We can both plasma and wet etch gold films. Staying focused on wet etches, there are several methods to wet etch gold including aqua regia, potassium cyanide, and potassium iodide with iodine. In the picture, below, we have a photo mask, over a 1 micron gold film. We can see the undercut from a wet etch, which would be isotropic (etching in all directions). With a wet etch, we need to be very mindful of photo-etch bias. That is, we need to be careful about the final metal line width, in terms of managing the pitch or the line and space density.   SEM Cross Section of a 1 micron gold film, with the photo mask still present:

The semiconductor industry increasingly relies on etching processes to define the shape and precision of features at technology nodes with sub nanometer dimensions. Join our next webinar where we will address the solutions for real world challenges like RIE Leg and HAR etch utilizing ion energy measurements.   What you will learn? - Understand ion behaviors in etching process at different process conditions such as RF frequencies, substrate biasing. - Explore the role of neutrals in etching via measurements of ion-to-neutral ratios. - Monitor and Control of 'RIE lag' issue with measurements of ion energies at different incident angles. To register click here - https://lnkd.in/gKqnPkZh #webinar #etching #improveetchrates #nanotechnology #semiconductors #semiconductorindusty #semiconductormanufacturing #semiconductortechnology #semiconductordevices #semiconductortools

I am pleased to share a recent spotlight review article published in ACS Applied Electronic Materials, highlighting the significance of developing high-k dielectric materials for oxide semiconductor TFTs, aiming at low power consumption in next-generation displays.https://https://lnkd.in/g5ngebTY #semiconductor, #materials, # Thin-Film Transistor,  # Display 

半導體的濺鍍或是蒸鍍的靶材為了達成膜厚的精密控制,某部分將使用具有磁性元件的轉盤進行沉積的控制,例如將金屬靶材電解游離後形成微小的分子分布於產品表面, 所以控制旋轉磁場的速率以及轉向角度就顯得異常重要,借由我們開發的多軸精密電磁系統量測設備,可以有效且穩定的進行精密的分析,同時導入量化生產。   In order to achieve precise control of the film thickness of semiconductor sputtering or evaporation targets, some parts will use a turntable with magnetic components to control the deposition. For example, the metal target is electrolytically dissociated to form tiny molecules distributed on the surface of the product. Therefore, it is extremely important to control the speed and steering angle of the rotating magnetic field. With the developed multi-axis precision electromagnetic system measurement equipment, we can effectively and stably conduct precise analysis and introduce quantitative production at the same time. #Semiconductor #PVD #CVD

Knowles Self-Bias Networks Integrate Source Decoupling and User Selectable Bias Resistance up to 40 GHz. Knowles’ Dielectric Laboratories (DLI) brand takes advantage of high permittivity ceramics and combines them with thin film resistors to provide Self Bias Networks that integrate source decoupling and user-selectable bias resistance. This is especially useful for self-biased MIC GaAs FET amplifiers. Their Bias Filter Networks are designed to filter RF signals from bias and control lines from 10 MHz to 40 GHz. The RF Blocking Networks also known as E-Field Choke™. https://lnkd.in/dQxYJVVW

In this work, we demonstrate a fully-vertical GaN-on-SiC pi-n diode with an optimized AlGaN buffer, simple fabrication process and record performance. The device performance at elevated temperatures and reverse leakage mechanismare analyzed. The high performance, including high-current capability, ultra-low RON, sp, high current swing and high breakdown voltage are promising for power electronics and demonstrates the huge potential of direct epitaxially-grown vertical GaN-on-SiC power devices.