Sanjeevikumar Padmanaban’s Post

After I got my Ph.D in capacitive power transfer, I have started working on Inductive power transfer to reduce the misalignment issues. Finally our findings got accepted in Results in Engineering Journal, Elsevier. I would like to thank Prof. Sanjeevikumar Padmanaban for his support. #ev #wirelesscharging #publication #research

Journal Article 37 📚 Excited to share our recent publication in Springer Fibers and Polymers! Our study developed highly flexible non-woven fabric from electrospun PVDF nanofibers containing cationic and anionic surfactants. This research advances the understanding of PVDF nanofabrics and sets the stage for future exploration in flexible electronics. This work was part of my PhD research under the guidance of Prof. S. Anandhan. #Research #Electronics #PVDF #Nanofabrics #Dielectrics #Piezoelectric #Sensors #EnergyStorage #PhD

This article discusses recent research in spintronics that introduces a new approach to designing magnetic second-order topological insulators (SOTIs). This generic method could revolutionize spintronics by utilizing electron spin in a more efficient way to transmit information. These materials show promise for use in advanced technologies, such as next-generation electronics, by providing more robust control over spin currents and improving device performance at reduced power costs. For more details, you can view the article here: https://lnkd.in/eriARabX

This article discusses recent research in spintronics that introduces a new approach to designing magnetic second-order topological insulators (SOTIs). This generic method could revolutionize spintronics by utilizing electron spin in a more efficient way to transmit information. These materials show promise for use in advanced technologies, such as next-generation electronics, by providing more robust control over spin currents and improving device performance at reduced power costs. For more details, you can view the article here: https://lnkd.in/evVFrSNw

Exciting advancements in high-electron-mobility transistor (#HEMT) technology! Dr. Michael Shur et al's research into an extreme bandgap Al₀.₆₄Ga₀.₃₆N quantum channel HEMT, grown using MOCVD on a bulk AlN substrate, has achieved a groundbreaking critical breakdown field of 11.37 MV/cm. ⚡ 🏷️ Key insights: ◽ This exceeds the expected 9.8 MV/cm for Al₀.₆₄Ga₀.₃₆N due to the quantization of the 2D electron gas. ◽ Unique quantum effects enable enhanced breakdown fields through real-space electron transfer to high-Al barrier layers under high electric fields. ◽ The design maintains electron quantization even at low sheet densities, showcasing a novel approach to power electronics. ◽ These findings mark a significant step forward for developing HEMTs with unprecedented power handling and efficiency. https://lnkd.in/g8mq5Mvj Rensselaer Polytechnic Institute #QuantumElectronics #PowerDevices #ElectronicEngineering

Ferroelectric nematic liquid crystals are true 3D fluids in which mechanical softness is combined with ferroelectric softness. The mechanical softness allows for the conversion of mechanical deformation of the container into complex and specific electric signals. FNLCs carry large applicative potential, from tactile sensors to energy harvesting devices. #research #science #paper #FET #H2020 #project #dissemination

🌟Excited to share that my latest research paper titled "Enhanced Optoelectronic Traits of Monolayer h-BAs for Augmented NOx (NO and NO2) Gas Sensing" has been published in the prestigious IEEE Sensors Journal! I would like to express my deepest gratitude to my supervisors, Prof. Avirup Dasgupta and Prof. Amit Agarwal, for their invaluable support and guidance throughout this work. 📝 This research focuses on the effects of NOx (NO and NO2) gas molecules on the electronics and optical characteristics of hexagonal Boron Arsenide (h-BAs) monolayers. 📝We observe that Hexagonal Boron Arsenide is a good fit for sensing applications. This inference is drawn by a thorough analysis of the absorption spectrum (α), dielectric constant (ϵ1, ϵ2), band structure, charge transfer (QT), total density of states (TDOS), and adsorption energy (Eads) presented in this study. Thanks to all the co-authors NEHA MISHRA and Prof. Santosh Kumar. Link:- https://lnkd.in/gsKH7FmW DiRac Lab ECE Department IIT Roorkee Indian Institute of Technology, Roorkee IEEE SENSORS #2D #sensors #optoelectronics #DFT #abinitio

The study investigates the properties of Ba1−xCoxFe12O19 (x = 0.00, 0.10, 0.20, 0.30, 0.40, 0.50) prepared at 1100 °C using heat treatment. It confirms the formation of M-type hexaferrites and BaFe2O4 phase through FTIR and XRD analysis. TGA shows thermal stability after 600 °C. VSM measurements reveal magnetic saturation varying from 24.390 to 41.629 Am2 kg−1 and coercivity from 1508 to 3577 Oe, indicating the samples are magnetically hard. Dielectric measurements suggest conduction at low frequencies is due to grain boundaries, while at higher frequencies it's influenced by grains. The study indicates potential applications in the automotive industry, sensors, and biomedical fields. DOI: https://Inkd.in/djT3kddu Key Terms- # Hexaferrites # Cobalt substitutions

This article discusses recent research in spintronics that introduces a new approach to designing magnetic second-order topological insulators (SOTIs). This generic method could revolutionize spintronics by utilizing electron spin in a more efficient way to transmit information. These materials show promise for use in advanced technologies, such as next-generation electronics, by providing more robust control over spin currents and improving device performance at reduced power costs. For more details, you can view the article here: https://lnkd.in/evVFrSNw

Mechatronics and Applications: An International Journal (MECHATROJ) Webpage URL: https://lnkd.in/fkNw35p On Model of Manufacturing of a W-Band CMOS Power Amplifier to Increase Density of Elements E.L. Pankratov, Nizhny Novgorod State University, Russia Abstract In this paper we introduce an approach to increase density of field-effect heterotransistors in the framework of a W-band CMOS power amplifier. In the framework of the approach we consider manufacturing the amplifier in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of an optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress. Keywords heterotransistors; W-band CMOS power amplifier; optimization of manufacturing; analytical approach for prognosis Original Source URL: https://lnkd.in/gwPETSZm Volume URL: https://lnkd.in/gRqtcnu