SOl & Engineered Substrates’ Post

1. In the context of an A/B/C heterostructure, which is commonly found in wide bandgap semiconductor transistors, can the total resistance be accurately described using the thermal circuit model? What modification should we make? 2. When measuring interfacial thermal resistance on a substrate, will the measured data be higher than, the same as, or lower than the standalone interface? Check out our recent paper: "Thermal boundary conductance and thermal conductivity strongly depend on nearby environment," published in Physical Review B. https://lnkd.in/gsHti3-C This work was made possible by the dedication of my graduate student Khalid Zobaid Adnan and the support from National Science Foundation (NSF). #NSF #Chips #Thermalmanagement #Interfaces #widebandgap #semiconductors #powerelectronics #heterostructures #thermal #cooling

EDS is a powerful tool for use in the semiconductor industry, where it is used to help researchers optimize semiconductor performance, ensure quality control and advance R&D. Our latest range of EDS detectors, XFlash® 7, are pushing the limits of how EDS can be used for semiconductor analysis. In particular, the optimized design of our XFlash® 7100oval detector means it can be used for the nanoscale elemental mapping of semiconductor features, allowing users to access TEM-like analysis on a SEM. Discover more about the use of our EDS detectors in the semiconductor industry here 👉 https://lnkd.in/dRxJZpPN #brukernanoanalytics #nanoanalysis #elemananalysis #elemantalmapping #QUANTAX #EDS #XFlash7 #sem #QUANTAXEDS #esprit #FlatQUAD #semiconductor #electronics #elementalanalysis #SEM #electronmicroscopy

EDS detectors, XFlash® 7, are pushing the limits of how EDS can be used for semiconductor analysis

USB charging is set to become the standard benefiting consumers and device manufacturers, and with Pulsiv this can cover all the devices traditionally connected via mains sockets at groundbreaking efficiencies that save money on electricity and reduce emissions too...

SLAC’s high-speed electron camera uncovers a new ‘light-twisting’ behavior in an ultrathin material The ultrathin material was a mere 50 nanometers thick. This is 1,000 to 10,000 times thinner than what we typically need to induce this type of response. This work represents another element in our toolbox for manipulating terahertz light fields, which in turn could allow for new ways to control materials and devices in interesting ways. https://lnkd.in/gD29XcT2 #nanotechnology #materialsscience #2dmaterials #electronics #engineering #technology

On this day, October 18, 1955, physicists Emilio Segrè and Owen Chamberlain made history with the discovery of the antiproton, a subatomic particle with the opposite charge to a proton. This breakthrough opened doors to a deeper understanding of antimatter and the nature of the universe. In electronics manufacturing, this discovery reminds me of how seemingly identical processes or components can yield opposite results if handled incorrectly—like polarity mismatches in circuits or misaligned inductors in PCB production, which can lead to bridging issues or circuit failures. Just as an antiproton behaves differently from a proton, understanding these subtle distinctions is crucial to preventing failures in our industry. Much like how physicists recognized the critical differences in antimatter, we must also be vigilant in identifying small but significant factors, like component misalignment, that can determine success or failure in production. Continuous learning and precision are key! #STEM #Manufacturing #ContinuousLearning #Electronics #Antimatter #PCBDesign

The essence of the new rapid testing method lies in dichroic photoemission. The material sample is exposed multiple times to high-frequency light with varying polarization. Initially, only electrons that rotate clockwise, for example, are released from the material. Subsequently, only the electrons that rotate counterclockwise are released. #nanotechnology #quantum #materialsscience #advancedmaterials #engineering #electronics #innovation #technology

NMOS Transistor: Symbol, Working, Diagram & Structure #nmostransistor #transistor #electronics #semiconductor #integratedcircuits A NMOS (n-type metal-oxide-semiconductor) transistor is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) where the majority charge carriers are electrons. It is a fundamental building block in modern integrated circuits, particularly in CMOS (complementary metal-oxide-semiconductor) technology. https://lnkd.in/g34NS6ui

NMOS Transistor: Symbol, Working, Diagram & Structure #nmostransistor #transistor #electronics #semiconductor #integratedcircuits A NMOS (n-type metal-oxide-semiconductor) transistor is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) where the majority charge carriers are electrons. It is a fundamental building block in modern integrated circuits, particularly in CMOS (complementary metal-oxide-semiconductor) technology. https://lnkd.in/g34NS6ui

Researchers developed a recipe for the room-temperature stabilization of thin films of α-Sn, a form of elemental tin that exhibits a variety of topologically nontrivial phases, but only at low temperatures. The study is an important contribution to the quest for new materials capable of replacing silicon in next-generation microelectronics. https://lnkd.in/gi-2sGNU