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These Chinese researchers report fatigue-free ferroelectric material that could be a game changer same as spintronics. Ferroelectric materials have switchable spontaneous polarization that can be reversed by an external electric field, which has been widely applied to non-volatile memory, sensing, and energy conversion devices. These researchers developed a fatigue-free ferroelectric system based on sliding ferroelectricity. A bilayer 3R-MoS2 dual-gate device was fabricated using the chemical vapor transport method. After 106 switching cycles with different pulse widths ranging from 1 ms to 100 ms, the ferroelectric polarization dipoles showed no loss, indicating that the device still retained its memory performance. Gemini says the following: Fatigue has restricted the use of ferroelectrics in certain applications. Fatigue-free materials could open doors for applications that require frequent switching or high endurance, such as: High-density non-volatile memory: Data storage devices with significantly higher density compared to current options. Faster and more efficient ferroelectric random-access memory (FRAM): Memory that retains data even when powered off, potentially offering faster read/write speeds than traditional flash memory. Highly durable sensors: Sensors that rely on the change in polarization of a ferroelectric material, potentially leading to more sensitive and reliable sensors. Energy harvesting devices: Devices that convert mechanical energy into electrical energy, potentially with improved efficiency due to fatigue-free operation. #climatechange #aiml #newcomputingarchitectures

Scientists develop fatigue-free ferroelectric material

Scientists develop fatigue-free ferroelectric material

phys.org

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