New 2-Stage Gain Block Amplifier for High-gain Broadband Applications 1700-5000 MHz
The BGM26 is a GaAs E-pHEMT Amplifier that is ideal as a 2-Stage Gain Block Amplifier for applications demanding high linearity in the wideband of 1700-5000 MHz.
The BGM26 provides a minimum of 30dB Gain (at 1700MHz) and also supports fast shutdown switching speed for TD-LTE & TD 5G NR applications.
The BGM26, a high-gain, wide-band gain-block amplifier with excellent linearity performance in the 1700-5000 MHz frequency band enables applications such as 5G m-MIMO and Mobile Infrastructure.
The BGM26 is internally matched at 50 ohms. It is available in RoHS2 compliant QFN 16L 3mm x 3mm surface mount package. These devices are 100% DC and RF tested to assure quality and performance.
When 5V/3V is used, Current flows of 90/56, and at 3500MHz, the characteristics are 31.5/30dB Gain, 30/28dBm output linearity OIP3, 19.5/15.7dBm Output P1, -50dBc characteristics satisfaction is 9.5/5.7dBm 5G NR ACLR and a Noise Figure of 2.9/3.0dB.
For more information (samples upon request, quote etc...) contact us at fh@fh-microwave.com or thru our web site at www.fh-microwave.com