PEN eBook November 2024, GaN Devices Set to Replace Silicon Carbide? DC Power, Energy, Wide Bandgap Monthly Insights, SiC Players and much more!

PEN eBook November 2024, GaN Devices Set to Replace Silicon Carbide? DC Power, Energy, Wide Bandgap Monthly Insights, SiC Players and much more!

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Global energy consumption is rising, driven by population growth and economic activity, leading to increased electricity demand, especially from data centers. This surge has also pushed CO2 emissions to record highs. To combat this, the IEA proposes key actions by 2030, including tripling renewable capacity, doubling energy efficiency improvements and reducing fossil fuel use. Electrification is crucial for decarbonization, with electricity’s share of global energy consumption expected to rise significantly. Renewable energy generation is set to grow, making it a cheaper and more sustainable option.

In this issue (PEN ebook - November 2024), Nihit Bajaj, senior director for medium-voltage GaN products in the GaN business line at Infineon Technologies, analyzes the role of GaN technology in enhancing energy efficiency. GaN offers superior performance and lower system costs across various applications, from chargers to industrial systems. As we strive for a greener future, GaN’s efficiency and power density advantages are essential in meeting global energy goals without increasing costs.

We also summarize a podcast with guests Sebastian Fahlbusch, manager of the power product application center for Nexperia in Hamburg, Germany, and Dilder Chowdhury, director of strategic marketing in power GaN technology at Nexperia in Manchester, U.K. The focus of this podcast was a discussion of Nexperia’s SiC and GaN product portfolios, their technological features and advantages, and their application space. Other topics analyzed in this issue are electric motors, wide-bandgap (WBG) multilevel inverters in 800-V battery EVs, a novel converter design that integrates an OBC and APM into EVs and 240-W USB reference designs. Morever, much of the energy consumed worldwide is attributed to data centers. This need is anticipated to increase dramatically, as more power is needed for quicker and more AI-driven calculations. WBG power devices, such those based on gallium nitride, may hold the key to raising the power density and efficiency of the power supply units that power the communication and processing boards in data centers. We will review some of the developments that Cambridge GaN Devices has made on its GaN power chips that are aimed at these kinds of applications

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- TECHNICAL ARTICLES/ANALYSIS -

New 1700V GaN Devices Set to Replace Silicon Carbide?

Power Integrations introduced a new single-stage offline power supply IC with multiple independently regulated outputs in their InnoMux-2 family. Based on the company’s PowiGaN technology, this solution is the first on the market to employ a 1700 V gallium nitride (GaN) switch.

Radu Barsan, the vice president of technology at Power Integrations, stated in the press release that their rapid pace of GaN development has led to three groundbreaking voltage ratings within two years: 900 V, 1250 V, and now 1700 V. In a flyback arrangement, the new 1700 V InnoMux-2 can readily manage a nominal input voltage of 1000 VDC, achieving more than 90 percent efficiency in applications requiring one, two, or three supply voltages. Each output is controlled to 1% precision, eliminating the need for post-regulators and thereby increasing system efficiency by around 10%, while also eliminating the need for heatsinks. Additionally, it provides 20% more power in standby mode, removes output bleed circuits, and reduces the bill of materials (BOM) by approximately 50%.

In an interview with Power Electronics News, Andrew Smith, Director of Training at Power Integrations, highlighted the importance of gallium nitride (GaN) technology, especially the development of 1700-volt devices for industrial applications. Among other benefits, these new GaN devices boast a low carbon footprint and great efficiency.

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Can Nuclear Power Plants Quench Data Centers’ Thirst for Energy?

The world’s first data center (DC)—in the sense of a computer room—can be traced back to 1945, when the Electronic Numerical Integrator and Computer (ENIAC) was installed at the University of Pennsylvania. It was the first general-purpose, electronic digital computer running on a program. Being 150 feet (45.72 meters) wide, this behemoth was powered by vacuum tubes and required 150 kW of power for processing just 0.05 MIPS. Cooling, ventilation, airflow and downtime were already a brainteaser for designers. Created by the military, it also served the purpose of verifying the feasibility of a thermonuclear weapon.

Then with the introduction of transistor-based mainframes in the 1960s, the concept of a data center evolved in line with the commercial use of computing machines that were deployed in dedicated office buildings.

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The Number of Silicon Carbide (SiC) Players is On Steep Rise

Over the last few years, the SiC market has experienced phenomenal growth, mainly driven by car electrification and the rollout of charging systems. Continuous focus on renewable energy sources to keep up with the increasing demand for electricity – from data centers, industrial processes, heat pump installations, etc. – will contribute to the technology’s further deployment

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How the DC-Industrie Project Can Power Future Factories with Energy Efficiency

In an era where sustainability and efficiency are paramount in industrial innovations, the transition from alternating current (AC) to direct current (DC) stands out as one of the most interesting advancements in manufacturing. DC power plays a crucial role in transforming factory operations, laying the foundation for more energy-efficient, robust and sustainable power systems.

Electric motors account for approximately 70% of electricity consumption in manufacturing, making them the largest energy consumers in the industrial sector. The adoption of DC power grids could potentially reduce energy losses and streamline operations. This transition is not merely hypothetical—initiatives such as the DC-Industrie research project are already making it a reality, showcasing how DC power can support the next generation of factories.

This article explores why industries are adopting DC power, the technical implementation of DC grids, their benefits and prospects for this technology.

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Qspice Series - 15 articles

Discover the latest Qspice series on Power Electronics News! Dive into detailed articles exploring advanced circuit simulations, transformer modeling, and more. Some episodes include part 10: FFT Analysis, Part 6: AC Analysis, and much more! There are 15 episodes in total!

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Wide Bandgap Monthly Insights – October 2024

Here’s a RoundUp of this month’s must-read news about SiC, GaN, and Wide Bandgap Materials!

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Wine Down Friday with Microchip’s Former CEO, Steve Sanghi

“The pace of business is accelerating, and complexity is increasing. Often, there is no time to waste or room for mistakes. Over the past seven years, I have compiled this book from the questions asked by the previous generation of employees, managers, and CEOs. This book aims to provide the current generation, from all walks of life, with an advantage and help them avoid some mistakes. It can serve as a constant reference on their desk.” [Steve Sanghi]

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- NEWS -

Innoscience Introduces Two New 100V Automotive-Grade GaN Devices for the Automotive LiDAR Market

Innoscience Technology has enhanced its portfolio with two new 100V automotive-grade GaN devices. The INN100W135A-Q (RDS(on),max = 13.5 mΩ) and the more compact INN100W800A-Q (RDS(on),max = 80 mΩ) are both AEC-Q101 approved and optimized for LiDAR, high power density DC-DC converters, and Class D audio applications within the automotive industry.

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Flex Power Modules Introduces an Intermediate Bus Converter (IBC) Designed for AI and ML Data Center Applications

Flex Power Modules announced the BMR316, a high-performance non-isolated, unregulated DC/DC intermediate bus converter (IBC) tailored for AI and ML data center applications requiring substantial computational power. The compact BMR316 is optimal for high-power IBC applications with constrained board space.

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Nexperia and KOSTAL Formed a Strategic Relationship to Advance Automotive-Grade Wide Bandgap (WBG) Devices

Nexperia has announced a strategic cooperation with KOSTAL, a prominent automotive supplier, facilitating the production of wide bandgap (WBG) devices that align with the stringent specifications of automotive applications. According to the terms of this cooperation, Nexperia will provide, develop, and manufacture WBG power electronics devices that will be designed and tested by Kostal. The partnership will primarily concentrate on the creation of SiC MOSFETs in topside cooled (TSC) QDPAK packaging for onboard chargers (OBC) in electric vehicles (EV).

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Infineon Introduces a New Generation of GaN Power Discretes with Higher Efficiency and Power Density

Infineon Technologies AG has introduced a new family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5, which further fortifies its Gallium Nitride (GaN) portfolio. This new product family is intended for a wide range of applications, including consumer and industrial switched-mode power supplies (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers, as well as renewable energy and motor drives in domestic appliances.

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