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Worldwide Top 20 Insulated Gate Bipolar Transistor [IGBT] Market 2025: Insights and Analysis
According to a research report by Spherical Insights & Consulting, the global market for Insulated Gate Bipolar Transistors (IGBT) is projected to expand from USD 5 billion in 2021 to USD 10 billion by 2030, reflecting a compound annual growth rate (CAGR) of 9% over the forecast period. The key driver behind this growth is the increasing adoption of IGBT devices across various industries, including automotive, consumer electronics, industrial, IT and telecommunications, healthcare, and aerospace and defense.
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The insulated gate bipolar transistor (IGBT) power module functions as a voltage-controlled device in power electronics, known for its high switching frequency and low conduction loss. This makes it a critical component in high-voltage industries. The global market for IGBT is experiencing significant growth, driven by increasing demand across various applications, including railways, medical devices, consumer electronics, energy and power, industrial systems, electric vehicles (EVs), uninterruptible power supplies (UPS), inverters, and motor drives.
The rising adoption of technologies, particularly the growth of electric and hybrid vehicles, has bolstered the demand for IGBT modules. These modules are crucial for EVs and hybrid vehicles, where a higher level of reliability is required compared to standard commercial applications. According to the Edison Electric Institute (EEI), EV sales in 2021 increased by 35% compared to 2020, highlighting the expanding market for electric and hybrid vehicles. This growth is expected to drive the IGBT market in the coming years.
Browse key industry insights spread across 200 pages with 116 market data tables and figures & charts from the report “Global Insulated Gate Bipolar Transistor [IGBT] Market Size, Share, and COVID-19 Impact Analysis, By Type (Discrete IGBT, Module IGBT), By Power Rating (High Power, Medium Power, Low Power), By Application (Consumer Electronics, Energy & Power, Industrial Manufacturing, Automotive (EV/HEV), Inverters/UPS, Railways, Renewables, Others), By Region (North America, Europe, Asia-Pacific, Latin America, Middle East, and Africa), Analysis and Forecast 2021 – 2030“
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The discrete IGBT segment is anticipated to experience a higher growth rate during the forecast period.
The global insulated gate bipolar transistor (IGBT) market is categorized into discrete IGBT and IGBT modules based on type. Among these, the discrete IGBT segment is anticipated to experience a higher growth rate during the forecast period. This growth is attributed to the benefits of discrete IGBT, including high current density and low power dissipation, which lead to greater efficiency and reduced heat sink requirements, ultimately lowering the overall system cost.
The global insulated gate bipolar transistor (IGBT) market is segmented by power rating into high power,
medium power, and low power. Among these, the high power segment is expected to experience significant CAGR growth during the forecast period. High power IGBTs are valued for their current-carrying capability, voltage-based gate control, and other features, making them increasingly popular in various applications. The demand for high power IGBTs is projected to surge, driven by their growing adoption in industries such as automotive (especially EV/HEV), inverters/UPS, railways, and renewable energy sectors.
The automotive (EV/HEV) segment is expected to generate the highest revenue during the forecast period.
Based on type, the global insulated gate bipolar transistor [IGBT] market is segmented into consumer electronics, energy & power, industrial manufacturing, automotive (EV/HEV), inverters/UPS, railways, renewables, and others. Among these, the power electronics segment is expected to witness a higher growth rate over the forecast period owing to reduced carbon emission regulation, the automobile market is moving towards the electrification of powertrains in electric and hybrid vehicles (EV/HEV), where conduction and switching losses are significantly diminished, having a direct impact on overall efficiency.
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The Asia Pacific region leads the global insulated gate bipolar transistor (IGBT) market, holding the largest market share of 53%.
Asia Pacific region leads the global insulated gate bipolar transistor (IGBT) market
Asia Pacific: Holds the largest market share at 53%, driven by high EV & BEV sales, advanced charging infrastructure, and being a major hub for electronic component manufacturing. The region's growth is also fueled by increasing industrial IoT and factory automation.North America: Expected to experience the fastest growth during the forecast period.Europe: Anticipated to gain significant market share after Asia Pacific, particularly notable for being the first region to implement IGBT traction systems in railways.
Asia Pacific dominates the market with the largest market share of 53%.
The global insulated gate bipolar transistor (IGBT) market is segmented by application into consumer electronics, energy & power, industrial manufacturing, automotive (EV/HEV), inverters/UPS, railways, renewables, and others. The power electronics segment is projected to experience the highest growth rate during the forecast period. This growth is driven by stringent carbon emission regulations and the automotive industry's shift towards electrification of powertrains in electric and hybrid vehicles (EV/HEV). The transition reduces conduction and switching losses, leading to improved overall efficiency.
Competitive Analysis:
The report provides a detailed examination of the leading companies in the global insulated gate bipolar transistor (IGBT) market. It includes a comparative assessment based on factors such as product offerings, business overviews, geographic presence, corporate strategies, market share by segment, and SWOT analysis. Additionally, the report offers an in-depth look at recent company developments, including product innovations, joint ventures, partnerships, mergers and acquisitions, and strategic alliances. This comprehensive analysis facilitates a thorough evaluation of the competitive landscape within the market.Global Insulated Gate Bipolar Transistor [IGBT] Market Companies covered: Cree, Intel Corporation, IXYS Corporation, ON Semiconductor, Panasonic Corporation, Fairchild Semiconductor International Inc., Methode Electronics Inc., Fuji Electric Co. Ltd., Danfoss Group, ELAN Electronics, TE Connectivity Ltd., Mitsubishi Electric Corporation, Samsung Semiconductors, ON Semiconductor, Hitachi Ltd., Seiko Epson Corporation, McLaren Applied, Texas Instruments Incorporated, LITTELFUSE Inc., Semikron Electronics GmbH and Co. Inc., Zhengzhou Yutong Group Co., Ltd., Diodes Incorporated, Renesas Electronics Corporation, ROHM Co., Ltd., Semiconductor Components Industries LLC, ABB Group, Infineon Technologies AG, WeEn Semiconductors, STMicroelectronics, Nuvoton Technology Corporation, Mouser Electronics Inc., Maxim Integrated Products Inc., StarPower Semiconductor, Alpha and Omega Semiconductor and Others.
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Market Segment
This study forecasts revenue at global, regional, and country levels from 2019 to 2030. Spherical Insights has segmented the global insulated gate bipolar transistor [IGBT] market based on the below-mentioned segments:
Insulated Gate Bipolar Transistor [IGBT] Market, By Type
Insulated Gate Bipolar Transistor [IGBT] Market, By Power Rating
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Insulated Gate Bipolar Transistor [IGBT] Market, By Application
Insulated Gate Bipolar Transistor [IGBT] Market, Regional Analysis
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About the Spherical Insights & Consulting
Spherical Insights & Consulting is a market research and consulting firm which provides actionable market research study, quantitative forecasting and trends analysis provides forward-looking insight especially designed for decision makers and aids ROI.
Which is catering to different industry such as financial sectors, industrial sectors, government organizations, universities, non-profits and corporations. The company's mission is to work with businesses to achieve business objectives and maintain strategic improvements.
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