IPA040N06NM5S
MOSFET
OptiMOS
TM
5Power-Transistor,60V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
PG-TO220FP
Productvalidation
QualifiedaccordingtoJEDECStandard
Drain
Pin 2
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
60
4
72
44
38
Unit
V
mΩ
A
nC
nC
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPA040N06NM5S
Package
PG-TO 220 FullPAK
Marking
040N065S
RelatedLinks
-
Final Data Sheet
1
Rev.2.1,2019-09-02
OptiMOS
TM
5Power-Transistor,60V
IPA040N06NM5S
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.1,2019-09-02
OptiMOS
TM
5Power-Transistor,60V
IPA040N06NM5S
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
Pulsed drain current
1)
Avalanche energy, single pulse
2)
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
Values
Min.
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
Max.
72
51
288
77
20
36
175
Unit
A
A
mJ
V
W
°C
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
T
C
=25°C
I
D
=72A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category; DIN IEC 68-1:
55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
Typ.
-
Max.
4.2
Unit
Note/TestCondition
°C/W -
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
3)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
60
2.1
-
-
-
-
-
-
-
Typ.
-
2.8
0.1
10
10
3.6
4.7
1.3
110
Max.
-
3.3
1
100
100
4.0
-
-
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=50µA
V
DS
=60V,V
GS
=0V,T
j
=25°C
V
DS
=60V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=72A
V
GS
=6V,I
D
=18A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=72A
1)
2)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Defined by design. Not subject to production test.
Final Data Sheet
3
Rev.2.1,2019-09-02
OptiMOS
TM
5Power-Transistor,60V
IPA040N06NM5S
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2700
670
28
14
16
33
8
Max.
3500
-
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
GS
=0V,V
DS
=30V,f=1MHz
V
DD
=30V,V
GS
=10V,I
D
=72A,
R
G,ext
=3Ω
V
DD
=30V,V
GS
=10V,I
D
=72A,
R
G,ext
=3Ω
V
DD
=30V,V
GS
=10V,I
D
=72A,
R
G,ext
=3Ω
V
DD
=30V,V
GS
=10V,I
D
=72A,
R
G,ext
=3Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
13
8
7
13
38
4.9
33
44
Max.
-
-
-
-
50
-
-
-
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DD
=30V,I
D
=72A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to10V
V
DD
=30V,V
GS
=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.88
33
28
Max.
30
288
1.2
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=30A,T
j
=25°C
V
R
=30V,I
F
=30A,di
F
/dt=100A/µs
V
R
=30V,I
F
=30A,di
F
/dt=100A/µs
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2019-09-02
OptiMOS
TM
5Power-Transistor,60V
IPA040N06NM5S
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
40
Diagram2:Draincurrent
80
35
70
30
60
25
50
P
tot
[W]
20
I
D
[A]
0
25
50
75
100
125
150
175
200
40
15
30
10
20
5
10
0
0
0
25
50
75
100
125
150
175
200
T
C
[°C]
P
tot
=f(T
C
)
I
D
=f(T
C
);V
GS
≥10V
T
C
[°C]
Diagram3:Safeoperatingarea
10
3
Diagram4:Max.transientthermalimpedance
10
1
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
1 µs
10
2
1 ms
10 ms
10
1
10 µs
100 µs
10
0
DC
Z
thJC
[K/W]
10
-1
-1
0
1
2
I
D
[A]
10
-1
10
-2
10
10
10
10
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
[V]
I
D
=f(V
DS
);T
C
=25°C;D=0;parameter:t
p
Z
thJC
=f(t
p
);parameter:D=t
p
/T
t
p
[s]
Final Data Sheet
5
Rev.2.1,2019-09-02
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