RB168MM-30TF
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●
Outline
V
R
I
o
I
FSM
30
1
30
V
A
A
●
Inner Circuit
●
Features
High reliability
Small power mold type
Super low I
R
●
Application
General rectification
●
Structure
Silicon epitaxial planar
●
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
180
T
aping Width(mm)
8
Quantity(pcs)
3000
T
aping Code
TR
Marking
11
●
Absolute Maximum Ratings (T
c
=25ºC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty
≦
0.5
Reverse direct voltage
Glass epoxy mounted
、
60Hz half sin waveform
、
resistive load
、
T
c
=120
℃
Max.
60Hz half sin waveform
、
Non-repetitive
、
one cycle
、
T
a
=25
℃
Limits
30
30
1
30
150
-55
½
150
Unit
V
V
A
A
℃
℃
-
-
●
Characteristics (T
j
=25ºC unless otherwise specified)
Parameter
Forward voltage
Reverse current
Attention
Symbol
V
F
I
R
Conditions
I
F
=1A
V
R
=30V
Min. Typ. Max. Unit
-
-
-
-
0.69
0.6
V
μA
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2019/05/28_Rev.002
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