NJ6N65 POWER MOSFET
6.2A 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The NJ6N65 is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
1
TO-220
FEATURES
* V
DS
= 650V
* I
D
=
6.2A
*
RDS(ON) = 1.7
ohm@VGS
= 10V
*
Ultra low gate charge (typical 20 nC )
*
Low reverse transfer Capacitance ( CRSS = typical 10pF )
*
Fast switching capability
*
Avalanche energy tested
*
Improved dv/dt capability, high ruggedness
1
TO-220F
1
TO-251
SYMBOL
1
TO-252
ORDERING INFORMATION
Ordering Number
NJ6N65-LI
NJ6N65-BL
NJ6N65F-LI
NJ6N65A-LI
NJ6N65D-TR
NJ6N65D-LI
Note:
Pin Assignment: G: Gate
D: Drain
Package
TO-220
TO-220
TO-220F
TO-251
TO-252
TO-252
S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape
Box
Bulk
Tube
Tube
Tape
Ree
Tube
NJ6N65 POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
440
Single Pulsed 6N65
E
AS
mJ
Avalanche Energy
(Note 3)
6N65-P
180
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
125
W
TO-220
Power Dissipation
TO-220F
P
D
40
W
TO-251/TO-252
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25 , Starting T
J
= 25°C
4. I
SD
6.2A, di/dt 200A/ s, V
DD
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
TO-251/TO-252
TO-220
TO-220F
TO-251/TO-252
SYMBOL
JA
Junction to Case
JC
RATING
62.5
62.5
110
1.0
3.2
2.27
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
NJ6N65 POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
Forward
Reverse
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A
6N65
Static Drain-Source On-State
V
GS
= 10V, I
D
= 3.1A
R
DS(ON)
Resistance
6N65-P
DYNAMIC CHARACTERISTICS
6N65
Input Capacitance
C
ISS
6N65-P
6N65
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f=1.0 MHz
6N65-P
6N65
Reverse Transfer Capacitance
C
RSS
6N65-P
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
6N65
Turn-On Rise Time
t
R
6N65-P
V
DD
=325V, I
D
=6.2A,
R
G
=25
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
6N65
Turn-Off Fall Time
t
F
6N65-P
Total Gate Charge
Q
G
V
DS
=520V, I
D
=6.2A,
Gate-Source Charge
Q
GS
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/ s (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%
2. Essentially independent of operating temperature
V
GS
= 0V, I
D
= 250 A
650
V
V
DS
= 650V, V
GS
= 0V
10
A
V
GS
= 30V, V
DS
= 0V
100 nA
I
GSS
V
GS
= -30V, V
DS
= 0V
-100 nA
BV
DSS
/ T
J
I
D
=250 A, Referenced to 25°C
0.53
V/°C
2.0
1.1
1.4
4.0
1.7
2
V
800 1000 pF
770 1000 pF
95 120 pF
70 120 pF
18
25
pF
10
25
pF
20
100
70
40
120
80
20
4.9
9.4
50
120
120
90
150
150
25
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
C
1.4
6.2
24.8
290
2.35
NJ6N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
P. W.
Period
D=
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
NJ6N65 POWER MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2025 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
