Infrared Light Emitting Diodes
LNA2904L
(LN166)
GaAs Infrared Light Emitting Diode
For optical control systems
φ5.0
±0.2
Not Soldered
Unit: mm
13.5
±1.0
3.9
±0.31
•
High-power output, high-efficiency: I
e
=
10 mW/sr (min.)
•
Emitted light spectrum suited for silicon photodetectors
•
Good radiant power output linearity with respect to input current
•
High center radiant intensity
•
Transparent epoxy resin package
(1.0)
11.5
±1.0
7.65
±0.2
■
Features
(1.0)
2-1.0
±0.15
2-0.6
±0.15
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Forward current
Pulse forward current
Power dissipation
Operating ambient temperature
Storage temperature
*
2.54
I
F
I
FP
P
D
T
opr
T
stg
100
1.5
160
−25
to
+85
−40
to
+100
mA
A
mW
°C
°C
φ6.0±0.2
V
R
3
V
1
1: Anode
2: Cathode
LT5RR102-001 Package
2
Note) *: f
=
100 Hz, Duty Cycle
=
0.1%
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Pulse forward voltage
*1
Reverse current
Center radiant intensity
*2
Symbol
V
F
V
FP
I
R
I
e
λ
P
∆λ
C
t
θ
I
FP
=
1.0 A
V
R
=
3 V
I
F
=
50 mA
I
F
=
50 mA
I
F
=
50 mA
Conditions
I
F
=
100 mA
Min
Typ
1.35
2.5
0.6±0.15
Symbol
Rating
Unit
Max
1.60
3.4
10
Unit
V
V
µA
mW/sr
nm
nm
pF
°
10.0
950
50
50
20
Peak emission wavelength
Spectral half band width
Terminal capacitance
Half-power angle
V
R
=
0 V, f
=
1 MHz
The angle when the radiant power is halved
P
O
at f
=
f
C
= −3
P
O
at f
=
50 kHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 1 MHz
3. *1: f
=
100 Hz, Duty Cycle
=
0.1%
*2: Rank classification
Rank
I
e
(mW/sr)
No-rank
>
10.0
T
10.0 to 14.0
U
>
12.0
f
C
: 10
×
log
Publication date: April 2004
SHC00033BED
1
LNA2904L
I
F
T
a
120
10
2
100
I
FP
Duty Cycle
t
W
=
10
µs
T
a
=
25°C
10
I
FP
V
F
t
W
=
10
µs
f
=
100 Hz
T
a
=
25°C
Pulse forward current I
FP
(A)
Forward current I
F
(mA)
10
80
Pulse forward current I
FP
(A)
10
−1
1
10
10
2
1
1
60
40
10
−1
10
−1
20
10
−2
0
−25
0
20
40
60
80
100
10
−3 −2
10
10
−2
0
1
2
3
4
5
Ambient temperature T
a
(°C)
Duty Cycle (%)
Forward voltage V
F
(V)
∆I
e
I
FP
10
3
(1) t
W
=
10
µs
f
=
100 Hz
(2) DC
T
a
=
25°C
1.6
V
F
T
a
10
I
F
=
100 mA
∆I
e
T
a
I
F
=
50 mA
Relative radiant intensity
∆I
e
Forward voltage V
F
(V)
10
2
(1)
10
1.2
50 mA
10 mA
Relative radiant intensity
∆I
e
0.8
1
1
(2)
0.4
10
−1
10
−2
1
10
10
2
10
3
10
4
0
−40
0
40
80
120
10
−1
−40
0
40
80
120
Pulse forward current I
FP
(mA)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
λ
P
T
a
1 000
I
F
=
50 mA
100
Spectral characteristics
I
F
=
50 mA
T
a
=
25°C
Directivity characteristics
0°
100
10°
20°
Peak emission wavelength
λ
P
(nm)
Relative radiant intensity (%)
980
80
80
70
Relative radiant intensity (%)
90
30°
960
60
60
50
40
40°
50°
60°
70°
80°
90°
940
40
30
20
920
20
900
−40
0
40
80
120
0
860
900
940
980
1 020 1 060 1 100
Ambient temperature T
a
(°C)
Wavelength
λ
(nm)
2
SHC00033BED
Caution for Safety
■
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP