LMGP

📢 Exciting News! 📢 I am thrilled to share our latest research paper, "Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices", published in Advanced Electronic Materials! 🌐 https://lnkd.in/eSPHFBTM In this study, we explored a new approach for studying the oxygen migration in valence change memories in operando using X-ray absorption near edge spectroscopy (XANES). 🔍 Key Highlights: - We explored the resistive switching mechanism of the novel analog TiN/La2NiO4+δ/Pt memristors - By monitoring absorbance intensity changes at a fixed energy position, we were able to deduce the shifts in the Ni-K edge energy position, which in turn gives information about the Ni oxidation state - We also observed the changes in TiN/La2NiO4+δ interface chemistry by in situ TEM+EELS studies of the Ti-L edge - We present a novel model of resistive switching based on the combination of the filamentary and interfacial switching mechanism This publication, of course, would not have been possible without the incredible work of Khanh Khuu, who carried out these amazing experiments as a part of his thesis work at Laboratoire des Matériaux et du Génie Physique (LMGP). I also would like to deeply thank the Nanoionics team and our leader Mónica Burriel for incredible support and guidance. Last but not least, I would like to express my sincere gratitude to ESRF - The European Synchrotron, and especially ID12 beamline scientists for giving us the platform and the opportunity to carry out this research. If you have any questions or would like to discuss our work further, please feel free to reach out. Stay tuned for more exciting results! ⚗ 💡 🔬

📢 Exciting News! 📢 I am thrilled to share our latest research paper, "Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐Based Memristive Devices", published in Advanced Electronic Materials! 🌐 https://lnkd.in/eSPHFBTM In this study, we explored a new approach for studying the oxygen migration in valence change memories in operando using X-ray absorption near edge spectroscopy (XANES). 🔍 Key Highlights: - We explored the resistive switching mechanism of the novel analog TiN/La2NiO4+δ/Pt memristors - By monitoring absorbance intensity changes at a fixed energy position, we were able to deduce the shifts in the Ni-K edge energy position, which in turn gives information about the Ni oxidation state - We also observed the changes in TiN/La2NiO4+δ interface chemistry by in situ TEM+EELS studies of the Ti-L edge - We present a novel model of resistive switching based on the combination of the filamentary and interfacial switching mechanism This publication, of course, would not have been possible without the incredible work of Khanh Khuu, who carried out these amazing experiments as a part of his thesis work at Laboratoire des Matériaux et du Génie Physique (LMGP). I also would like to deeply thank the Nanoionics team and our leader Mónica Burriel for incredible support and guidance. Last but not least, I would like to express my sincere gratitude to ESRF - The European Synchrotron, and especially ID12 beamline scientists for giving us the platform and the opportunity to carry out this research. If you have any questions or would like to discuss our work further, please feel free to reach out. Stay tuned for more exciting results! ⚗ 💡 🔬