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Effects of NBTI On PMOS Device With Technology Scaling
IEEE Xplore
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Effects of NBTI On PMOS Device With Technology Scaling
IEEE Xplore
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IEEE Xplore
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由 SM Shakil 著作2022被引用 9 次 — The scaling of gate oxides has increased NBTI vulnerabilities since hydrogen diffuses more quickly through polysilicon than through oxide [18]. The threshold ...
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Effects of NBTI On PMOS Device With Technology Scaling
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Negative bias temperature instability (NBTI) is caused by a physical mechanism that increased the fault sensitivity of metal oxide semiconductor ...
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A comprehensive model for PMOS NBTI degradation
ResearchGate
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ResearchGate
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2024年12月5日 — ... NBTI leads to a temporal shift in device parameters such as threshold voltage (V TH ), saturation current (I SAT ), subthreshold slope (SS) ...
Negative-Bias Temperature Instability - an overview
ScienceDirect.com
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ScienceDirect.com
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NBTI happens to PMOS devices under negative gate voltages at elevated temperatures. The degradation of device performance, mainly manifested as the absolute ...
Modeling and Minimization of PMOS NBTI Effect for Robust ...
University of York Computer Science Department
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University of York Computer Science Department
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ABSTRACT. Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors. In.
Mechanism and modeling of PMOS NBTI degradation with ...
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Numerous experiments demonstrate that the applied V ds weakens the NBTI effect due to the reduction of the vertical gate oxide field, and enhances the channel ...
Negative-bias temperature instability
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NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often ...
Dynamic NBTI of PMOS transistors and its impact on ...
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Effects of NBTI On PMOS Device With Technology Scaling · NBTI Product Level Reliability Challenges · Effects of Interface States and Positive Charges on NBTI in ...
Modeling of PMOS NBTI Effect Considering Temperature ...
清华大学
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清华大学
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由 H Luo 著作被引用 72 次 — NBTI significantly shifts the threshold voltage Vth on the order of 20−50mV for devices operating at 1.2V or below [1]. Previous research showed that Vth shifts ...
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