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Reliability of thin ZrO 2 gate dielectric layers
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由 R O’Connor 著作2011被引用 8 次 — In this work we present the results of a reliability study of thin ZrO2 layers fabricated into nMOSFETs in an advanced CMOS process. In Section 2 we outline the ...
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In this work we examine the positive bias temperature instability (PBTI) and stress induced leakage current (SILC) reliability of nFET devices with thin ...
Reliability of thin ZrO2 gate dielectric layers
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Model evaluations of field-dependent leakage currents in the high-k dielectric oxides HfO2 and ZrO2 are presented. The treatment includes a number of ...
Reliability of Ultra-thin Zirconium Dioxide (ZrO2) Films on ...
IEEE Xplore
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This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO 2 ) films on strained-Si/SiGe layers.
Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS ...
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由 A Gehring 著作被引用 5 次 — Apart from thermo- dynamic stability, interface quality, and reliability, the dielectric permittivity and the barrier height are of ut- most importance as they ...
PREPARATION AND CHARACTERIZATION OF THIN ZrO2 ...
International Atomic Energy Agency
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International Atomic Energy Agency
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由 M Nemec 著作2011 — The most important is the high gate leakage current [1], which is due to an exponential increase of direct tunneling through the gate dielectric for oxide ...
Electrical and reliability characteristics of ZrO2 deposited ...
ResearchGate
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ResearchGate
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2024年10月22日 — Specifically, ZrO 2 possesses several properties including high mechanical strength, high fracture toughness, high hardness, excellent wear and ...
ZrO 2 - deposited directly on Si for gate dielectric application
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2000年11月13日 — Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, ...
Electrical and reliability characteristics of ZrO2 deposited ...
Scilit
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Scilit
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Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, and high ...
Solution-processed amorphous ZrO2 gate dielectric films ...
National Institutes of Health (NIH) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles
National Institutes of Health (NIH) (.gov)
https://pmc.ncbi.nlm.nih.gov › articles
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由 JB Seon 著作2018被引用 22 次 — The crystalline rough surfaces induce charge trapping and leakage currents, deteriorating the channel mobility and the reliability of thin film devices. Even ...