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[en] We will discuss how the positional correlation between constituent atoms in an otherwise disordered lattice may give rise to extended eigenstates in the system. The so called random dimer model will be introduced, which was initially proposed to explain sudden changes in the transport properties of certain conducting polymers on protonation. The effect of positional correlations on almost periodic and hierarchical lattices is even more spectacular, as will be discussed. (author)
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Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 30-32; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 8 refs., 3 figs.
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[en] The effects of exchange and correlations on the ground state properties of a two-dimensional spin-polarized electron gas are studied within the static and dynamic (quantum) version of the self-consistent mean-field approximation of Singwi, Tosi, Land and Sjolander (STLS). Results are compared with the recent Monte-Carlo data of Tanatar and Ceperley. Our study suggests that the short-range correlations between the like spins are somewhat overestimated in the static as well as dynamic STLS approaches. (author)
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Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 393-394; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 3 refs., 2 figs., 1 tab.
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AbstractAbstract
[en] This volume covers a wide range of topics of current interest in solid state physics like phonon physics, phase transitions, superconductivity, magnetism, electronic structures, semiconductor physics, transport properties, surface science, liquids and glasses, novel materials, complex systems, instrumentation etc. Papers relevant to INIS are indexed separately
Source
2000; 722 p; Universities Press; Hyderabad (India); 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; ISBN 81 7371 295 6;
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Singh, J.P.; Tripathi, A.; Ahuja, R.; Dutt, R.N.; Kanjilal, D.; Mehta, G.K.; Raychoudhuri, A.K.
Proceedings of the DAE solid state physics symposium. V. 422000
Proceedings of the DAE solid state physics symposium. V. 422000
AbstractAbstract
[en] The design, installation and performance of an in situ high vacuum STM in the materials science beam line of 15 UD tandem Pelletron accelerator, NSC are reported. The scanning tunneling microscope (STM) has imaged highly oriented pyrolytic graphite (HOPG) surfaces with atomic resolution. Local current-voltage spectroscopy has also been performed on p-type Si (111) samples. A band gap of 1.09 ± 0.1 eV was calculated. (author)
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Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 241-242; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 4 refs., 3 figs.
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[en] The microscopic theory of the anomaly in Raman-active superconducting phonon mode of the heavy fermion systems (HFS) is reported here. The periodic Anderson model in presence of BCS type superconductivity is considered. Then phonon interactions to the hybridization between conduction electrons and f-electrons as well as bare f-level position are taken for calculation. The Zubarev technique is used to calculate the phonon Green function of the system. The temperature dependence of the superconducting phonon mode of the conduction electrons is investigated for different model parameters of the system. The change in the electronic system is discussed. (author)
Source
Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 407-408; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 3 refs., 2 figs.
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Vaidhyanathan, L.S.; Mani, Awadhesh; Gireesan, K.; Janawadkar, M.P.; Hariharan, Y.; Radhakrishnan, T.S.
Proceedings of the DAE solid state physics symposium. V. 422000
Proceedings of the DAE solid state physics symposium. V. 422000
AbstractAbstract
[en] Nb/Fe multilayer structures have been prepared by RF magnetron sputtering technique and variation of the superconducting transition temperature (Tc) has been studied as a function of layer thickness of Fe, keeping Nb layer thickness constant. The results show a monotonic decrease of Tc with increase in layer thickness of Fe. (author)
Source
Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 467-468; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 3 refs., 4 figs.
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ALLOYS, DIMENSIONS, ELECTRIC CONDUCTIVITY, ELECTRICAL PROPERTIES, ELECTRON TUBES, ELECTRONIC EQUIPMENT, ELEMENTS, EQUIPMENT, FILMS, METALS, MICROWAVE EQUIPMENT, MICROWAVE TUBES, PHYSICAL PROPERTIES, REFRACTORY METALS, SEMICONDUCTOR JUNCTIONS, SUPERCONDUCTING JUNCTIONS, THERMODYNAMIC PROPERTIES, TRANSITION ELEMENTS
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AbstractAbstract
[en] We discuss the general principle of magnetic measurements using induction techniques. A particular case of dc induction technique involving SQUID based magnetometers is discussed in details to highlight the advantages as well as problems associated with this technique. (author)
Source
Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 95-98; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 9 refs., 3 figs.
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Rout, B.; Ghose, S.K.; Dey, S.; Mahapatra, D.P.; Dev, B.N.; Bakhru, H.; Haber, A.W.
Proceedings of the DAE solid state physics symposium. V. 422000
Proceedings of the DAE solid state physics symposium. V. 422000
AbstractAbstract
[en] A high energy ion microbeam facility, has been setup at one of the beam lines of the 3 MV tandem accelerator facility at IOP, Bhubaneswar. This is the first facility of its kind in the country having potential applications in the growing fields involving semiconductors (micro-electronics), material science, biology, environmental science, from both scientific and industrial research point of view. We have achieved a spatial resolution of 4 μm. Elemental maps, obtained by RBS measurements on a transmission electron microscope grid and on Au globules on a Si(111) surface, are presented. (author)
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Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 266-267; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 3 refs., 3 figs.
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AbstractAbstract
[en] We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)
Source
Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 22-25; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 15 refs., 4 figs.
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[en] Investigations on the electrical activation in high dose Al+ ion implanted SiC have been carried out using spreading resistance depth profiling measurements. The spreading resistance data is used to obtain the depth profile of carrier concentration. The depth profile information obtained closely matches with TRIM profile. The results indicate the existence of optimum conditions in terms of ion dose and implantation temperature. (author)
Source
Mukhopadhyay, R.; Yusuf, S.M. (Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Godwal, B.K. (ed.) (High Pressure Physics Division, Bhabha Atomic Research Centre, Mumbai (India)); 722 p; ISBN 81 7371 295 6; ; 2000; p. 661-662; 42. DAE solid state physics symposium; Kalpakkam (India); 20-24 Dec 1999; 3 refs., 3 figs.
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