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[en] On the basis of a model of radiation-induced segregation in concentrated binary alloys, the rates of diffusion-limited growth of coherent and incoherent new-phase precipitates are found. The reasons for the large difference between the two are discussed. (author)

[en] The kinetics of vacancies and interstitials produced by irradiation in a substitutional binary alloy with complete miscibility is considered. Point defects are assumed do not interact with stress fields of sinks. At sinks the concentrations of interstitials and vacancies are fixed at their thermal equilibrium values. In spite of radiation-induced segregation causing local changes in compositions around sinks, all sinks remain unbiased towards absorption of defects of a certain type, i.e. segregation alone does not lead to preferential loss of either vacancies or interstitials at a given sink. The rate equations for the average defect concentrations are derived

[en] A theory of polyamorphous transformations in glasses is constructed in the framework of a model of heterophase fluctuations with allowance for the fact that a glass inherits the short- and intermediate-range order from the liquid. A multicomponent order parameter describing the concentration of fluctuons with different types of short-range order is introduced, along with the concepts of isoconfigurational and non-isoconfigurational transitions in the glass. Taking the nonergodicity, nonequilibrium, and multiplicity of structural states of a glass into account leads to a kinetic criterion of observability of polyamorphism of a glass. As an example, a theory is constructed for the low-temperature first-order phase transition in an orientational glass based on doped fullerite. The relaxation processes of this system are described, including the subsystem of tunneling states. The possibility of a hierarchy of polyamorphous transformations in a glass is discussed

No abstract available

[en] The stochastic theory of kinetics of axial channeling of low energies ions has been built taking into account the energy loss of ions in a channel. The analytical expression for the dechanneling function of ions has been obtained. The dechanneling functions and dopant profiles of boron ions of various energies implanted into the silicon single crystal along the <100> direction have been calculated both analytically and by means of the computer simulation method and good quantitative agreement between the results of calculations and the experimental SIMS data has been achieved

No abstract available

[en] The conditions of stability of an irradiated disordered substitutional alloy relative to the formation of coherent precipitates, incoherent precipitates and precipitates situated at sinks of point defects are found. A way of constructing the radiation-modified phase diagram of the alloy - the analogue of the phase diagram in the absence of irradiation - is indicated. It is shown that the solubility curve of the impurity on the phase diagram of the irradiated alloy splits into two curves, one describing the solid solution-coherent precipitates, the order solid solution-incoherent precipitates phase equilibrium. Model calculations of the diagrams are done for the Ni-Si and Ni-Al alloys. (author)

No abstract available