[en] The energy dependence of the concentration of primary displacements induced by protons and pions in diamond has been calculated in the energy range 50 MeV - 50 GeV, in the frame of the Lindhard theory. The concentrations of primary displacements induced by protons and pions have completely different energy dependencies: the proton degradation is very important at low energies, and is higher than the pion one in the whole energy range investigated, with the exception of the Δ₃₃ resonance region. Diamond has been found, theoretically, to be one order of magnitude more resistant to proton and pion irradiation in respect to silicon

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[en] The magnetic susceptibility of dilute (La-Ce)Al₂ alloys is examined. A comparison between the experimental data and the theoretical calculations is carried out taking into account the influence of the crystal-field and the Kondo effect. (Auth.)

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[en] Effects of the crystalline electric field on the amorphous alloys of light rare-earth ions are briefly discussed. Magnetic susceptibility and magnetisation of Pr₂₁Ag₇₉ and Nd₂₁Ag₇₉ alloys are explained in terms of the non-axial crystal-field model. (author)

[en] Bulk samples obtained from two wafers of a silicon monocrystal material produced by Float-Zone refinement have been analyzed using the four-point probe method. One of the wafers comes from an oxygenated ingot; two sets of pure and oxygenated samples have been irradiated with 24 GeV/c protons in the fluence range from 10¹³ p/cm² to 2x10¹⁴ p/cm². Van der Pauw resistivity and Hall coefficient have been measured before and after irradiation as a function of the temperature. A thermal treatment (30 minutes at 100C) has been performed to accelerate the reverse annealing effect in the irradiated silicon. The irradiated samples show the same exponential dependence of the resistivity and of the Hall coefficient on the temperature from 370K to 100K, corresponding to the presence of radiation-induced deep energy levels around 0.6-0.7eV in the silicon gap. The free carrier concentrations (n, p) have been evaluated in the investigated fluence range. The inversion of the conductivity type from n to p occurred respectively at 7x10¹³ p/cm² and at 4x10¹³ p/cm² before and after the annealing treatment, for both the two sets. Only slight differences have been detected between the pure and oxygenated samples

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[en] We present the modifications to a previous work, which allow evaluation, for arbitrary values of the exchange constant J and of the potential constant V, of the magnetoresistivity of dilute alloys with 3d or Gd impurities. By using these theoretical results, an analysis is carried out for the experimental data on the magnetoresistivity of (La,Gd)Al₂ dilute alloys

[en] A novel method, suitable to evaluate the electric field distribution in the space charge region of silicon diodes directly from the measurement of their pulse current response, is proposed. A Transient Current Technique experimental setup, based on a nano-second UV laser, is used for this purpose. It is shown that the problem of solving the basic equations, connecting the current response to the electric field distribution, can be expressed by a linear integral equation. An iterative mathematical procedure is used to obtain the solution, and a spatial resolution of about 10 μm, comparable to the accuracy obtainable from other commonly used techniques, is deduced from the numerical tests. A preliminary analysis of measured data has also been carried out; the results are encouraging, but they point out that a refinement of the transport model is needed to reach a satisfactorily practical applicability