[en] Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to 10¹⁵ n_eq/cm² have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg. after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 μm thick sensors depleted to ∼200 μm after irradiation at the design fluence of 1x10¹⁵ 1 MeV n_eq/cm² and were almost fully depleted at a fluence of 0.5x10¹⁵ 1 MeV n_eq/cm². The spatial resolution was measured for angles of incidence between 0 deg. and 30 deg. The optimal value was found to be better than 5.3 μm before irradiation and 7.4 μm after irradiation

[en] We present an overview of the strategy for Event Selection at the ATLAS High Level Trigger and describe the architecture and main components of the software developed for this purpose

[en] Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation