[en] Highlights: • ZnO–Ti–Si system is very important for the structural design. • The electrically induced crystallization method is useful to diffusion process. • Intermetallic compound characteristics have been presented using electrically induced crystallization. • Interface mechanism about diffusion of TZO–TiSi_x–Si structure is presented. - Abstract: Electrically induced crystallization (EIC) is a recently developed process for material modification. This study is applied to EIC to fabricate ZnO–Ti–Si multi-layer structures of various thicknesses to dope Ti into ZnO thin film and to form TiSi_x intermetallic compound (IMC) in a single step. The IMC layer was confirmed using transmission electron microscopy images. The Ti layer thickness was more than 40 nm, which enhanced electron transmission and decreased the total electrical resistance in the structure. Finally, the diffusion mechanisms of EIC and the annealing process were investigated. This study shows that the EIC process has potential for industrial applications

[en] Density functional theory was employed to design enhanced amorphous NbO_2 thermoelectrics. The covalent-ionic nature of Nb–O bonding is identical in amorphous NbO_2 and its crystalline counterpart. However, the Anderson localisation occurs in amorphous NbO_2, which may affect the transport properties. We calculate a multifold increase in the absolute Seebeck coefficient for the amorphous state. These predictions were critically appraised by measuring the Seebeck coefficient of sputtered amorphous and crystalline NbO_2 thin films with the identical short-range order. The first-order phase transition occurs at approximately 550 °C, but amorphous NbO_2 possesses enhanced transport properties at all temperatures. Amorphous NbO_2, reaching  −173 μV K"−"1, exhibits up to a 29% larger absolute Seebeck coefficient value, thereby validating the predictions. (paper)

[en] Using density functional theory, we have demonstrated that alloying of RuO_2 (P4_2/mnm) with 3d transition metals (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn) gives rise to a substantial increase in the Seebeck coefficient probably due to quantum confinement. As Fe yields the largest enhancement, it was selected for experimental verification. We synthesized combinatorial Ru–Fe–O thin films and subsequently measured their transport properties at elevated temperatures. The Fe-alloyed samples increase the Seebeck coefficient threefold with respect to the unalloyed RuO_2 specimen thereby verifying the theoretical prediction. The here obtained power factor of 274 μW K"−"2 m"−"1 is not only the largest reported value for RuO_2 based compounds but it also occurs at ∼600 °C thus increasing the Carnot efficiency significantly. (paper)

[en] Multilevel programing and charge transport characteristics of intrinsic SiO_x-based resistive switching memory are investigated using TaN/SiO_x/n⁺⁺Si (MIS) and TiW/SiO_x/TiW (MIM) device structures. Current transport characteristics of high- and low-resistance states (HRS and LRS) are studied in both device structures during multilevel operation. Analysis of device thermal response demonstrates that the effective electron energy barrier is strongly dependent on the resistance of the programed state, with estimates of 0.1 eV in the LRS and 0.6 eV in the HRS. Linear data fitting and conductance analyses indicate Poole-Frenkel emission or hopping conductance in the low-voltage region, whereas Fowler-Nordheim (F-N) or trap-assisted tunneling (TAT) is indicated at moderate voltage. Characterizations using hopping transport lead to hopping distance estimates of ∼1 nm in the LRS for both device structures. Relative permittivity values (ε_r) were extracted using the Poole-Frenkel formulism and estimates of local filament temperature, where ε_r values were ∼80 in the LRS and ∼4 in the HRS, suggesting a strongly polarized medium in the LRS. The onset of F-N tunneling or TAT corresponds to an observed “overshoot” in the I-V response with an estimated threshold of 1.6 ± 0.2 V, in good agreement with reported electro-luminescence results for LRS devices. Resistive switching is discussed in terms of electrochemical reactions between common SiO₂ defects, and specific defect energy levels are assigned to the dominant transitions in the I-V response. The overshoot response in the LRS is consistent with TAT through either the Eγ' oxygen vacancy or the hydrogen bridge defect, both of which are reported to have an effective bandgap of 1.7 eV. The SET threshold at ∼2.5 V is modeled as hydrogen release from the (Si-H)₂ defect to generate the hydrogen bridge, and the RESET transition is modeled as an electrochemical reaction that re-forms (SiH)₂. The results provide further insights into charge transport and help identify potential switching mechanisms in SiO_x-based unipolar resistive switching memory.

[en] The phase formation in the boron-rich section of the Al-Y-B system has been explored by a correlative theoretical and experimental research approach. The structure of coatings deposited via high power pulsed magnetron sputtering from a compound target was studied using elastic recoil detection analysis, electron energy loss spectroscopy spectrum imaging, as well as X-ray and electron diffraction data. The formation of AlYB_1_4 together with the (Y,Al)B_6 impurity phase, containing 1.8 at. % less B than AlYB_1_4, was observed at a growth temperature of 800 °C and hence 600 °C below the bulk synthesis temperature. Based on quantum mechanical calculations, we infer that minute compositional variations within the film may be responsible for the formation of both icosahedrally bonded AlYB_1_4 and cubic (Y,Al)B_6 phases. These findings are relevant for synthesis attempts of all boron rich icosahedrally bonded compounds with the space group: Imma that form ternary phases at similar compositions.

[en] We report the results of a systematic study to understand low drive current of Ge-nMOSFET (metal-oxide-semiconductor field-effect transistor). The poor electron transport property is primarily attributed to the low dopant activation efficiency and high contact resistance. Results are supported by analyzing source/drain Ohmic metal contacts to n-type Ge using the transmission line method. Ni contacts to Ge nMOSFETs exhibit specific contact resistances of 10^-3-10^-5 Ω cm², which is significantly higher than the 10^-7-10^-8 Ω cm² of Ni contacts to Ge pMOSFETs. The high resistance of Ni Ohmic contacts to n-type Ge is attributed mainly to insufficient dopant activation in Ge (or high sheet resistance) and a high tunneling barrier. Results obtained in this work identify one of the root causes of the lower than expected Ge nMOSFET transport issue, advancing high mobility Ge channel technology.

[en] Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm