AbstractAbstract
[en] The growth of copper crystals on copper, by thermal decomposition of CuF2, has been studied previously. It has been observed that, at a given temperature, the deposition rate reaches a maximum value which seems to be controlled only by the desorption of fluorine from a complete monolayer.Recent results concerning the thermal decomposition of TiF4 and Ti and FeF2 on Fe confirm this mechanism and give a measure of the heat of desorption of fluorine. The deposition rate can be generally improved if one uses the thermal decomposition of subfluorides. A method was developed based on sub-fluoride preparation in situ near the substrate. According to this new method, the formation of the sub-fluoride and its thermal decomposition occur simultaneously. This process is very suitable for the deposition of refractory metals at relatively low temperatures. Some examples are given, concerning mainly the decomposition of WF5. Generally, in comparison with other halides, it seems that the thermal decomposition of fluorides is preferable for obtaining very high quality deposits, provided the technology necessary for fluorine chemistry is available
Primary Subject
Source
Blocher, J.M. Jr.; Hintermann, H.E.; Hall, L.H. (eds.); p. 178-189; 1975; The Electrochemical Society, Inc; Princeton, NJ; 5. international conference on chemistry vapor deposition; Burkinghamshire, UK; 21 Sep 1975
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Book
Literature Type
Conference
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Faron, R.; Barques, M.; Gillardeau, J.; Hasson, R.; Dejachy, G.; Durand, J.P.
Proceedings of the third international conference on chemical vapor deposition1972
Proceedings of the third international conference on chemical vapor deposition1972
AbstractAbstract
No abstract available
Original Title
Epitaxy
Primary Subject
Source
Glaski, F.A. (ed.); p. 439-452; 1972; American Nuclear Society; Hinsdale, IL; 3. international conference on chemical vapor deposition; Salt Lake City, Utah, USA; 24 Apr 1972
Record Type
Book
Literature Type
Conference
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INIS VolumeINIS Volume
INIS IssueINIS Issue
Gillardeau, J.; Bona, F.; Dejachy, G.
Commissariat a l'energie atomique et aux energies alternatives - CEA, Service de Documentation, Centre d'Etudes Nucleaires de Saclay, 91190 Gif-sur-Yvette (France)1963
Commissariat a l'energie atomique et aux energies alternatives - CEA, Service de Documentation, Centre d'Etudes Nucleaires de Saclay, 91190 Gif-sur-Yvette (France)1963
AbstractAbstract
[en] An automatic liquid nitrogen feeding device has been developed (and used) in the framework of corrosion tests realized with constantly renewed uranium hexafluoride. The issue was to feed liquid nitrogen to a large capacity metallic trap in order to condensate uranium hexafluoride at the exit of the corrosion chambers. After having studied various available devices, a feeding device has been specifically designed to be robust, secure and autonomous, as well as ensuring a high liquid nitrogen flowrate and a highly elevated feeding frequency. The device, made of standard material, has been used during 4000 hours without any problem
[fr]
Un dispositif de remplissage automatique en azote liquide a ete mis au point, realise et utilise. Il permet une grande autonomie, une cadence tres elevee et a ete entierement realise avec du materiel standard. Ce travail a ete rendu necessaire par les caracteristiques des pieges speciaux utilises pour l'hexafluorure d'uranium chaud, dans des ensembles de corrosions de longue duree. La presence dans ces pieges froids de fluides tres corrosifs nous a amenes a prevoir un systeme de securite permettant de proteger l'appareillage en cas d'incident amenant le rechauffage des pieges. (auteurs)Original Title
Dispositif d'alimentation automatique en azote liquide
Primary Subject
Secondary Subject
Source
1963; 15 p; 6 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses
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Report
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