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Dressendorfer, P.V.
Sandia National Labs., Albuquerque, NM (USA)1988
Sandia National Labs., Albuquerque, NM (USA)1988
AbstractAbstract
[en] Total dose damage, displacement damage, and single particle events can cause microelectronic circuits to cease to function properly. The tolerance of an integrated circuit to radiation damage can be affected by a large number of factors, including the irradiation conditions, postirradiation conditions, transistor characteristics, and circuit design. Improvements in hardness can be achieved by proper fabrication techniques (including minimization of gate oxide thickness, processing temperatures, and the use of hydrogen for MOS devices) and appropriate design considerations. 23 refs., 5 figs
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1988; 16 p; International conference on the application of accelerators in research and industry; Denton, TX (USA); 7-9 Nov 1988; CONF-881151--10; Available from NTIS, PC A03/MF A01; 1 as TI89001227; Portions of this document are illegible in microfiche products.
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Dressendorfer, P.V.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1998
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1998
AbstractAbstract
[en] This part of the Short Course will review the basic mechanisms for radiation effects in semiconductor devices. All three areas of radiation damage will be considered -- total dose, displacement effects, and single event effects. Each of these areas will be discussed in turn. First an overview and background will be provided on the historical understanding of the damage mechanism. Then there will be a discussion of recent enhancements to the understanding of those mechanisms and an up-to-date picture provided of the current state of knowledge. Next the potential impact of each of these damage mechanisms on devices in emerging technologies and how the mechanisms may be used to understand device performance will be described, with an emphasis on those likely to be of importance in the new millennium. Finally some additional thoughts will be presented on how device scaling expected into the next century may impact radiation hardness
Original Title
Radiation effects on semiconductor devices
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1998; 119 p; IEEE nuclear and space radiation effects conference; Newport Beach, CA (United States); 20-24 Jul 1998; CONF-980705--; CONTRACT AC04-94AL85000; ALSO AVAILABLE FROM OSTI AS DE98005925; NTIS; US GOVT. PRINTING OFFICE DEP
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Dressendorfer, P.V.; Armendariz, M.G.
Sandia Labs., Albuquerque, NM (USA)1980
Sandia Labs., Albuquerque, NM (USA)1980
AbstractAbstract
[en] A technique is presented for using the scanning electron microscope (SEM) in the electron-beam-induced current (EBIC) mode to delineate latch-up paths in CMOS ICs. In the EBIC mode, the current produced by the collection and separation of the electron-beam-generated electron-hole pairs in the space charge regions of the device is measured and used to form an image. Since the collection of these carriers is dependent on space charge region width (and thus junction potential), anything that alters the depletion layer width will affect the collection efficiency. In a latch condition the junctions involved in the latch will be biased differently from those which are not, and thus the EBIC signal from those regions should be measurably different
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1980; 4 p; Annual conference on nuclear and space radiation effects; Ithaca, NY, USA; 15 - 18 Jul 1980; CONF-800703--1; Available from NTIS., PC A02/MF A01
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AbstractAbstract
[en] Microstructural variations have been investigated in radiation-hard and -soft oxides, using electron spin resonance. It is observed that the radiation tolerance of hard and soft oxides grown in both steam and dry oxygen is correlated with two 'trivalent silicon' point defects. One trivalent silicon defect, the P(b) center, is responsible for the radiation-induced interface states. The other center, termed E-prime, appears to be the hole trap
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IEEE Transactions on Nuclear Science; ISSN 0018-9499; ; v. NS-30 p. 4602-4604
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AbstractAbstract
No abstract available
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Annual meeting of the American Nuclear Society; Boston, MA (USA); 9-14 Jun 1985; CONF-850610--; Published in summary form only.
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Dressendorfer, P.V.; Dawes, W.R. Jr.; Light, R.W.; Shafer, B.D.
Sandia National Labs., Albuquerque, NM (USA)1983
Sandia National Labs., Albuquerque, NM (USA)1983
AbstractAbstract
[en] A 2μm technology for producing LSI and VLSI parts hardened to megarad radiation levels has been developed and implemented on a single-event-upset-free 16K static CMOS RAM. Key process features and technology trade-offs are discussed
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1983; 5 p; 20. IEEE annual conference on nuclear and space radiation; Gatlinburg, TN (USA); 18-21 Jul 1983; CONF-830714--1; Available from NTIS, PC A02/MF A01 as DE83008908
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[en] The authors have subjected thermally grown films of SiO2 on Si substrates to Co60 gamma irradiation. Using electron spin resonance they observed three radiation-induced paramagnetic defect centers in the structures at room temperature. One resonance appears to be unambiguously associated with trivalent silicon bonded to three other silicons at the Si/SiO2 interface. Two other resonances are very much like resonances observed earlier in irradiated high purity bulk SiO2; those bulk SiO2 resonances have been associated with trivalent silicons bonded to three oxygens and unpaired electrons in nonbonding oxygen 2p orbitals
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IEEE Transactions on Nuclear Science; ISSN 0018-9499; ; v. 29(6); p. 1459-1461
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BETA DECAY RADIOISOTOPES, BETA-MINUS DECAY RADIOISOTOPES, CHALCOGENIDES, COBALT ISOTOPES, ELECTROMAGNETIC RADIATION, ELEMENTS, INTERMEDIATE MASS NUCLEI, IONIZING RADIATIONS, ISOMERIC TRANSITION ISOTOPES, ISOTOPES, MAGNETIC RESONANCE, MAGNETISM, MINUTES LIVING RADIOISOTOPES, NUCLEI, ODD-ODD NUCLEI, OXIDES, OXYGEN COMPOUNDS, RADIATION EFFECTS, RADIATIONS, RADIOISOTOPES, RESONANCE, SEMICONDUCTOR DEVICES, SEMIMETALS, SILICON COMPOUNDS, TRANSISTORS, YEARS LIVING RADIOISOTOPES
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[en] We report electron spin resonance (ESR) measurements of E'-center (a ''trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on γ-irradiated metal/oxide/silicon (MOS)= structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation-induced P/sub b/ -center (a ''trivalent silicon'' center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the P/sub b/ centers are neutral when the Fermi level is at mid-gap. Since the P/sub b/ centers are largely responsible for the radiation-induced interface states, one may take ΔV/sub mg/ C/sub ox//e (where ΔV/sub mg/ is the ''mid-gap'' C-V shift, C/sub ox/ is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation-induced E' density equals ΔV/sub mg/ C/sub ox//e in oxides grown in both stream and dry oxygen. Etch-back experiments demonstrate that the E' centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E' density and ΔV/sub mg/ annealing characteristics are virtually identical. We conclude that the E' centers are largely responsible for the deep hole traps in thermal SiO2 on silicon
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Journal of Applied Physics; ISSN 0021-8979; ; v. 55(10); p. 3495-3499
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CHALCOGENIDES, COLOR CENTERS, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, ELECTRICAL PROPERTIES, ELECTROMAGNETIC RADIATION, ELEMENTS, IONIZING RADIATIONS, MAGNETIC RESONANCE, OXIDES, OXYGEN COMPOUNDS, PHYSICAL PROPERTIES, POINT DEFECTS, RADIATION EFFECTS, RADIATIONS, RESONANCE, SEMICONDUCTOR DEVICES, SEMIMETALS, SILICON COMPOUNDS, TRANSISTORS, VACANCIES
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Schwank, J.R.; Winokur, P.S.; Dressendorfer, P.V.; Turpin, D.C.; Sanders, D.T.
Sandia National Labs., Albuquerque, NM (USA)1987
Sandia National Labs., Albuquerque, NM (USA)1987
AbstractAbstract
[en] Interface-traps have been measured on transistors immediately after a pulse of ionizing radiation using a fast subthreshold I-V technique. Results are presented for interface-trap generation as a function of temperature and for different process conditions. These studies more clearly identify the physical mechanisms of interface-trap generation for polysilicon gate CMOS devices
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1987; 5 p; 24. annual conference on nuclear and space radiation in electronics; Snowmass, CO (USA); 28-31 Jul 1987; CONF-870724--7; Available from NTIS, PC A02/MF A01; 1 as DE87005842; Portions of this document are illegible in microfiche products.
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Diehl, S.E.; Ochoa, A. Jr.; Dressendorfer, P.V.; Koga, R.; Kolasinski, W.A.
Auburn Univ., AL (USA). Dept. of Electrical Engineering; Sandia Labs., Albuquerque, NM (USA); Aerospace Corp., Los Angeles, CA (USA). Space Sciences Lab1982
Auburn Univ., AL (USA). Dept. of Electrical Engineering; Sandia Labs., Albuquerque, NM (USA); Aerospace Corp., Los Angeles, CA (USA). Space Sciences Lab1982
AbstractAbstract
[en] Cosmic ray interactions with memory cells are known to cause temporary, random, bit errors in some designs. The sensitivity of polysilicon gate CMOS static RAM designs to logic upset by impinging ions has been studied using computer simulations and experimental heavy ion bombardment. Results of the simulations are confirmed by experimental upset cross-section data. Analytical models have been extended to determine and evaluate design modifications which reduce memory cell sensitivity to cosmic ions. A simple design modification, the addition of decoupling resistance in the feedback path, is shown to produce static RAMs immune to cosmic ray-induced bit errors
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Jun 1982; 34 p; IEEE annual conference on nuclear and space radiation effect; Las Vegas, NV (USA); 20 - 22 Jul 1982; CONF-820708--6; Available from NTIS., PC A03/MF A01 as DE82018967
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